MJ10022 MJ10023

2

Motorola Bipolar Power Transistor Device Data

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage (Table 1)

MJ10022

(IC = 100 mA, IB = 0)

MJ10023

VCEO(sus)

350

400

—

—

—

—

Vdc

Collector Cutoff Current

(VCEV = Rated Value, VBE(off) = 1.5 Vdc)

(VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 150_C)

ICEV

—

—

—

—

0.25

5.0

mAdc

Collector Cutoff Current

(VCE = Rated VCEV, RBE = 50 Ω, TC = 100_C)

ICER

—

—

5.0

mAdc

Emitter Cutoff Current

(VEB = 2.0 V, IC = O)

IEBO

—

—

175

mAdc

SECOND BREAKDOWN

Second Breakdown Collector Current with Base Forward Biased

IS/b

See Figure 13

Clamped Inductive SOA with Base Reverse Biased

RBSOA

See Figure 14

ON CHARACTERISTICS (1)

DC Current Gain

(IC = 10 Adc, VCE = 5.0 V)

hFE

50

—

600

—

Collector–Emitter Saturation Voltage

(IC = 20 Adc, IB = 1.0 Adc)

(IC = 40 Adc, IB = 5.0 Adc)

(IC = 20 Adc, IB = 10 Adc, TC = 100_C)

VCE(sat)

—

—

—

—

—

—

2.2

5.0

2.5

Vdc

Base–Emitter Saturation Voltage

(IC = 20 Adc, IB = 1.2 Adc)

(IC = 20 Adc, IB = 1.2 Adc, TC = 100_C)

VBE(sat)

—

—

—

—

2.5

2.5

Vdc

Diode Forward Voltage

(IF = 20 Adc)

Vf

—

2.5

5.0

Vdc

DYNAMIC CHARACTERISTICS

Output Capacitance

(VCB = 10 Vdc, IE = 0, ftest = 1.0 kHz)

Cob

150

—

600

pF

SWITCHING CHARACTERISTICS

Resistive Load (Table 1)

Delay Time

(VCC = 250 Vdc, IC = 20 A, IB1 = 1.0 Adc,

VBE(off) = 5.0 V, tp = 50 µs,

Duty Cycle

v 2.0%)

td

—

0.03

0.2

µs

Rise Time

(VCC = 250 Vdc, IC = 20 A, IB1 = 1.0 Adc,

VBE(off) = 5.0 V, tp = 50 µs,

Duty Cycle

v 2.0%)

tr

—

0.4

1.2

µs

Storage Time

VBE(off) = 5.0 V, tp = 50 µs,

Duty Cycle

v 2.0%)

ts

—

0.9

2.5

µs

Fall Time

v 2.0%)

tf

—

0.3

0.9

µs

Inductive Load, Clamped (Table 1)

Storage Time

(ICM = 20 A, VCEM = 250 V, IB1 = 1.0 A,

VBE(off) = 5 V, TC = 100_C)

tsv

—

1.9

4.4

µs

Crossover Time

(ICM = 20 A, VCEM = 250 V, IB1 = 1.0 A,

VBE(off) = 5 V, TC = 100_C)

tc

—

0.6

2.0

µs

Fall Time

VBE(off) = 5 V, TC = 100_C)

tfi

—

0.3

—

µs

Storage Time

(ICM = 20 A, VCEM = 250 V, IB1 = 1.0 A,

VBE(off) = 5 V, TC = 25_C)

tsv

—

1.0

—

µs

Crossover Time

(ICM = 20 A, VCEM = 250 V, IB1 = 1.0 A,

VBE(off) = 5 V, TC = 25_C)

tc

—

0.3

—

µs

Fall Time

VBE(off) = 5 V, TC = 25_C)

tfi

—

0.15

—

µs

(1) Pulse Test: PW = 300

µs, Duty Cycle v 2%.