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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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LC75841PE датащи(PDF) 2 Page - Sanyo Semicon Device |
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LC75841PE датащи(HTML) 2 Page - Sanyo Semicon Device |
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2 / 18 page  LC75841PE No.A1578-2/18 Specifications Absolute Maximum Ratings at Ta = 25 °C, VSS = 0V Parameter Symbol Conditions Ratings Unit Maximum supply voltage VDD max VDD -0.3 to +7.0 V VIN1 CE, CL, DI, INH -0.3 to +7.0 Input voltage VIN2 OSC -0.3 to VDD+0.3 V Output voltage VOUT S1 to S27, COM1, COM2, P1 to P4, OSC -0.3 to VDD+0.3 V IOUT1 S1 to S27 300 μA IOUT2 COM1, COM2 3 Output current IOUT3 P1 to P4 5 mA Allowable power dissipation Pd max Ta=105 °C 50 mW Operating temperature Topr -40 to +105 °C Storage temperature Tstg -55 to +125 °C Allowable Operating Ranges at Ta = -40 to +105 °C, VSS = 0V Ratings Parameter Symbol Conditions min typ max unit Supply voltage VDD VDD 4.0 6.0 V VIH1 CE, CL, DI, INH 0.45VDD 6.0 Input high-level voltage VIH2 OSC External clock operating mode 0.45VDD VDD V VIL1 CE, CL, DI, INH 0 0.2VDD Input low-level voltage VIL2 OSC External clock operating mode 0 0.2VDD V Recommended external resistor for RC oscillation Rosc OSC RC oscillator operating mode 39 k Ω Recommended external capacitor for RC oscillation Cosc OSC RC oscillator operating mode 1000 pF Guaranteed range of RC oscillation fosc OSC RC oscillator operating mode 19 38 76 kHz External clock operating frequency fCK OSC External clock operating mode [Figure 3] 19 38 76 kHz External clock duty cycle DCK OSC External clock operating mode [Figure 3] 30 50 70 % Data setup time tds CL, DI [Figure 1][Figure 2] 160 ns Data hold time tdh CL, DI [Figure 1][Figure 2] 160 ns CE wait time tcp CE, CL [Figure 1][Figure 2] 160 ns CE setup time tcs CE, CL [Figure 1][Figure 2] 160 ns CE hold time tch CE, CL [Figure 1][Figure 2] 160 ns High-level clock pulse width t φH CL [Figure 1][Figure 2] 160 ns Low-level clock pulse width t φL CL [Figure 1][Figure 2] 160 ns Rise time tr CE, CL, DI [Figure 1][Figure 2] 160 ns Fall time tf CE, CL, DI [Figure 1][Figure 2] 160 ns INH switching time tc INH, CE [Figure 4][Figure 5][Figure 6] 10 μs |
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