2SA2124 datasheet(2/7 Pages) SANYO

2 / 7 page

2SA2124

No.7920-2/7

Continued from preceding page.

Parameter

Symbol

Conditions

Ratings

Unit

Base Current

--400

Collector Dissipation

When mounted on ceramic substrate (450mm2×0.8mm)

1.3

Tc=25°C

3.5

Junction Temperature

150

°C

Storage Temperature

Tstg

--55 to +150

°C

Electrical Characteristics at Ta=25°C

Parameter

Symbol

Conditions

Ratings

Unit

min

typ

max

Collector Cutoff Current

ICBO

VCB=--30V, IE=0A

--0.1

μA

Emitter Cutoff Current

IEBO

VEB=--4V, IC=0A

--0.1

μA

DC Current Gain

hFE1VCE=--2V, IC=--100mA

200

560

hFE2VCE=--2V, IC=--1.5A

Gain-Bandwidth Product

VCE=--10V, IC=--300mA

440

MHz

Collector-to-Emitter Saturation Voltage

VCE(sat)

IC=--1.5A, IB=--75mA

--0.2

--0.4

Base-to-Emitter Saturation Voltage

VBE(sat)

IC=--1.5A, IB=--75mA

--0.95

--1.2

Collector-to-Base Breakdown Voltage

V(BR)CBO

IC=--10μA, IE=0A

--30

Collector-to-Emitter Breakdown Voltage

V(BR)CEO

IC=--1mA, RBE=∞

--30

Emitter-to-Base Breakdown Voltage

V(BR)EBO

IE=--10μA, IC=0A

--6

Output Capacitance

Cob

VCB=--10V, f=1MHz

Turn-ON Time

ton

See speciﬁed Test Circuit.

Storage Time

tstg

200

Fall Time

Switching Time Test Circuit

Ordering Information

Device

Package

Shipping

memo

2SA2124-TD-E

PCP

1,000pcs./reel

Pb Free

VCC= --12V

VBE=5V

INPUT

OUTPUT

220

μF

470

μF

PW=20

μs

IB1

D.C.

≤1%

IB2

IC=20IB1= --20IB2= --0.5A

2SA2124 датащи(PDF) 2 Page - Sanyo Semicon Device

2SA2124 датащи(HTML) 2 Page - Sanyo Semicon Device

Html Pages

1 2 3 4 5 6 7

датащи скачать

ссылки URL