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US2413 датащи(PDF) 2 Page - Unitpower Technology Limited

номер детали US2413
подробное описание детали  P-Ch 20V Fast Switching MOSFETs
PDF  4 Pages
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производитель  UNITPOWER [Unitpower Technology Limited]
домашняя страница  http://www.unitpower.cn
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US2413 датащи(HTML) 2 Page - Unitpower Technology Limited

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2
P-Ch 20V Fast Switching MOSFETs
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=-250uA
-20
---
---
V
△
BVDSS/△TJ BVDSS Temperature Coefficient
Reference to 25℃ , ID=-1mA
---
-0.012
---
V/℃
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=-4.5V , ID=-2A
---
125
155
m
Ω
VGS=-2.5V , ID=-1A
---
180
220
VGS(th)
Gate Threshold Voltage
VGS=VDS , ID =-250uA
-0.5
-0.8
-1.2
V
△
VGS(th)
VGS(th) Temperature Coefficient
---
3.97
---
mV/℃
IDSS
Drain-Source Leakage Current
VDS=-16V , VGS=0V , TJ=25℃
---
---
1
uA
VDS=-16V , VGS=0V , TJ=55℃
---
---
5
IGSS
Gate-Source Leakage Current
VGS=±8V , VDS=0V
---
---
±
100
nA
gfs
Forward Transconductance
VDS=-5V , ID=-2A
---
5.6
---
S
Rg
Gate Resistance
VDS=0V , VGS=0V , f=1MHz
---
25
50
Ω
Qg
Total Gate Charge (-4.5V)
VDS=-15V , VGS=-4.5V , ID=-2A
---
4.7
6.6
nC
Qgs
Gate-Source Charge
---
0.8
1.1
Qgd
Gate-Drain Charge
---
1.3
1.8
Td(on)
Turn-On Delay Time
VDD=-10V , VGS=-4.5V , RG=3.3Ω
ID=-2A
---
3.2
6.4
ns
Tr
Rise Time
---
34
61
Td(off)
Turn-Off Delay Time
---
18
36
Tf
Fall Time
---
9.2
18.4
Ciss
Input Capacitance
VDS=-15V , VGS=0V , f=1MHz
---
320
448
pF
Coss
Output Capacitance
---
51
71
Crss
Reverse Transfer Capacitance
---
41
57
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current
1,4
VG=VD=0V , Force Current
---
---
-2.2
A
ISM
Pulsed Source Current
2,4
---
---
-8.8
A
VSD
Diode Forward Voltage
2
VGS=0V , IS=-1A , TJ=25℃
---
---
-1.2
V
trr
Reverse Recovery Time
IF=-2A , dI/dt=100A/µs , TJ=25℃
---
10.2
---
nS
Qrr
Reverse Recovery Charge
---
2.5
---
nC
Note :
1.The data tested by surface mounted on a 1 inch
2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦ 300us , duty cycle ≦ 2%
3.The power dissipation is limited by 150℃ junction temperature
4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Diode Characteristics
US2413



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