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US2403 датащи(PDF) 2 Page - Unitpower Technology Limited

номер детали US2403
подробное описание детали  P-Ch 20V Fast Switching MOSFETs
PDF  4 Pages
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производитель  UNITPOWER [Unitpower Technology Limited]
домашняя страница  http://www.unitpower.cn
Logo UNITPOWER - Unitpower Technology Limited

US2403 датащи(HTML) 2 Page - Unitpower Technology Limited

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2
P-Ch 20V Fast Switching MOSFETs
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=-250uA
-20
---
---
V
△
BVDSS/△TJ BVDSS Temperature Coefficient
Reference to 25℃ , ID=-1mA
---
-0.016
---
V/℃
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=-4.5V , ID=-3A
---
44
55
m
Ω
VGS=-2.5V , ID=-2A
---
56
70
VGS=-1.8V , ID=-1A
---
73
85
VGS(th)
Gate Threshold Voltage
VGS=VDS , ID =-250uA
-0.3
-0.5
-1.0
V
△
VGS(th)
VGS(th) Temperature Coefficient
---
3.97
---
mV/℃
IDSS
Drain-Source Leakage Current
VDS=-16V , VGS=0V , TJ=25℃
---
---
-1
uA
VDS=-16V , VGS=0V , TJ=55℃
---
---
-5
IGSS
Gate-Source Leakage Current
VGS=±8V , VDS=0V
---
---
±
100
nA
gfs
Forward Transconductance
VDS=-5V , ID=-3A
---
14
---
S
Qg
Total Gate Charge (-4.5V)
VDS=-15V , VGS=-4.5V , ID=-3A
---
12.1
16.9
nC
Qgs
Gate-Source Charge
---
1.5
2.1
Qgd
Gate-Drain Charge
---
3.1
4.3
Td(on)
Turn-On Delay Time
VDD=-10V , VGS=-4.5V ,
RG=3.3Ω, ID=-3A
---
4.4
8.8
ns
Tr
Rise Time
---
45
81
Td(off)
Turn-Off Delay Time
---
48.4
97
Tf
Fall Time
---
30.4
60.8
Ciss
Input Capacitance
VDS=-15V , VGS=0V , f=1MHz
---
938
1313
pF
Coss
Output Capacitance
---
108
151
Crss
Reverse Transfer Capacitance
---
96
134
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current
1,4
VG=VD=0V , Force Current
---
---
-3.6
A
ISM
Pulsed Source Current
2,4
---
---
-14.4
A
VSD
Diode Forward Voltage
2
VGS=0V , IS=-1A , TJ=25℃
---
---
-1
V
trr
Reverse Recovery Time
IF=-3A , dI/dt=100A/µs , TJ=25℃
---
28
---
nS
Qrr
Reverse Recovery Charge
---
9
---
nC
Note :
1.The data tested by surface mounted on a 1 inch
2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦ 300us , duty cycle ≦ 2%
3.The power dissipation is limited by 150℃ junction temperature
4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Diode Characteristics
US2403



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