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UD6003 датащи(PDF) 2 Page - Unitpower Technology Limited

номер детали UD6003
подробное описание детали  P-Ch 60V Fast Switching MOSFETs
PDF  4 Pages
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производитель  UNITPOWER [Unitpower Technology Limited]
домашняя страница  http://www.unitpower.cn
Logo UNITPOWER - Unitpower Technology Limited

UD6003 датащи(HTML) 2 Page - Unitpower Technology Limited

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2
P-Ch 60V Fast Switching MOSFETs
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=-250uA
-60
---
---
V
△
BVDSS/△TJ BVDSS Temperature Coefficient
Reference to 25℃ , ID=-1mA
---
-0.03
---
V/℃
VGS=-10V , ID=-12A
---
50
60
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=-4.5V , ID=-8A
---
75
90
m
Ω
VGS(th)
Gate Threshold Voltage
-1.2
---
-2.5
V
△
VGS(th)
VGS(th) Temperature Coefficient
VGS=VDS , ID =-250uA
---
4.56
---
mV/℃
VDS=-48V , VGS=0V , TJ=25℃
---
---
1
IDSS
Drain-Source Leakage Current
VDS=-48V , VGS=0V , TJ=55℃
---
---
5
uA
IGSS
Gate-Source Leakage Current
VGS=±20V , VDS=0V
---
---
±
100
nA
gfs
Forward Transconductance
VDS=-5V , ID=-12A
---
15.4
---
S
Rg
Gate Resistance
VDS=0V , VGS=0V , f=1MHz
---
13.5
27
Ω
Qg
Total Gate Charge (-4.5V)
---
9.86
---
Qgs
Gate-Source Charge
---
3.08
---
Qgd
Gate-Drain Charge
VDS=-48V , VGS=-4.5V , ID=-10A
---
2.95
---
nC
Td(on)
Turn-On Delay Time
---
28.8
---
Tr
Rise Time
---
19.8
---
Td(off)
Turn-Off Delay Time
---
60.8
---
Tf
Fall Time
VDD=-15V , VGS=-10V , RG=3.3Ω,
ID=-1A
---
7.2
---
ns
Ciss
Input Capacitance
---
1447
---
Coss
Output Capacitance
---
97.3
---
Crss
Reverse Transfer Capacitance
VDS=-15V , VGS=0V , f=1MHz
---
70
---
pF
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
EAS
Single Pulse Avalanche Energy
5
VDD=-25V , L=0.1mH , IAS=-20A
29
---
---
mJ
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current
1,6
---
---
-18
A
ISM
Pulsed Source Current
2,6
VG=VD=0V , Force Current
---
---
-36
A
VSD
Diode Forward Voltage
2
VGS=0V , IS=-1A , TJ=25℃
---
---
-1.2
V
Note :
1.The data tested by surface mounted on a 1 inch
2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦ 300us , duty cycle ≦ 2%
3.The EAS data shows Max. rating . The test condition is VDD=-25V,VGS=-10V,L=0.1mH,IAS=-26.6A
4.The power dissipation is limited by 150℃ junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Guaranteed Avalanche Characteristics
Diode Characteristics
UD6003



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