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UD3002 датащи(PDF) 2 Page - Unitpower Technology Limited

номер детали UD3002
подробное описание детали  N-Ch 30V Fast Switching MOSFETs
PDF  4 Pages
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производитель  UNITPOWER [Unitpower Technology Limited]
домашняя страница  http://www.unitpower.cn
Logo UNITPOWER - Unitpower Technology Limited

UD3002 датащи(HTML) 2 Page - Unitpower Technology Limited

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N-Ch 30V Fast Switching MOSFETs
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
30
---
---
V
△
BVDSS/△TJ BVDSS Temperature Coefficient
Reference to 25℃ , ID=1mA
---
0.023
---
V/℃
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=10V , ID=15A
---
15
18
m
Ω
VGS=4.5V , ID=10A
---
22
30
VGS(th)
Gate Threshold Voltage
VGS=VDS , ID =250uA
1.2
1.5
2.5
V
△
VGS(th)
VGS(th) Temperature Coefficient
---
-5.2
---
mV/℃
IDSS
Drain-Source Leakage Current
VDS=24V , VGS=0V , TJ=25℃
---
---
1
uA
VDS=24V , VGS=0V , TJ=55℃
---
---
5
IGSS
Gate-Source Leakage Current
VGS=±20V , VDS=0V
---
---
±
100
nA
gfs
Forward Transconductance
VDS=5V , ID=15A
---
21.6
---
S
Rg
Gate Resistance
VDS=0V , VGS=0V , f=1MHz
---
2.5
5
Ω
Qg
Total Gate Charge (4.5V)
VDS=15V , VGS=4.5V , ID=15A
---
6.2
8.7
nC
Qgs
Gate-Source Charge
---
2.4
3.4
Qgd
Gate-Drain Charge
---
2.5
3.5
Td(on)
Turn-On Delay Time
VDD=15V , VGS=10V , RG=3.3Ω,
ID=15A
---
3
6.0
ns
Tr
Rise Time
---
7.6
14
Td(off)
Turn-Off Delay Time
---
21
42
Tf
Fall Time
---
4
8
Ciss
Input Capacitance
VDS=15V , VGS=0V , f=1MHz
---
572
801
pF
Coss
Output Capacitance
---
81
113
Crss
Reverse Transfer Capacitance
---
65
91
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
EAS
Single Pulse Avalanche Energy
5
VDD=25V , L=0.1mH , IAS=10A
16
---
---
mJ
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current
1,6
VG=VD=0V , Force Current
---
---
30
A
ISM
Pulsed Source Current
2,6
---
---
60
A
VSD
Diode Forward Voltage
2
VGS=0V , IS=1A , TJ=25℃
---
---
1.2
V
trr
Reverse Recovery Time
IF=15A , dI/dt=100A/µs , TJ=25℃
---
17
---
nS
Qrr
Reverse Recovery Charge
---
3
---
nC
Note :
1.The data tested by surface mounted on a 1 inch
2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦ 300us , duty cycle ≦ 2%
3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=21A
4.The power dissipation is limited by 150℃ junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Diode Characteristics
Guaranteed Avalanche Characteristics
UD3002



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