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UD2401 датащи(PDF) 2 Page - Unitpower Technology Limited

номер детали UD2401
подробное описание детали  P-Ch 20V Fast Switching MOSFETs
PDF  4 Pages
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производитель  UNITPOWER [Unitpower Technology Limited]
домашняя страница  http://www.unitpower.cn
Logo UNITPOWER - Unitpower Technology Limited

UD2401 датащи(HTML) 2 Page - Unitpower Technology Limited

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2
P-Ch 20V Fast Switching MOSFETs
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=-250uA
-20
---
---
V
△
BVDSS/△TJ BVDSS Temperature Coefficient
Reference to 25℃ , ID=-1mA
---
-0.014
---
V/℃
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=-4.5V , ID=-15A
---
42
52
m
Ω
VGS=-2.5V , ID=-10A
---
67
85
VGS(th)
Gate Threshold Voltage
VGS=VDS , ID =-250uA
-0.5
-0.8
-1.2
V
△
VGS(th)
VGS(th) Temperature Coefficient
---
3.95
---
mV/℃
IDSS
Drain-Source Leakage Current
VDS=-16V , VGS=0V , TJ=25℃
---
---
1
uA
VDS=-16V , VGS=0V , TJ=55℃
---
---
5
IGSS
Gate-Source Leakage Current
VGS=±12V , VDS=0V
---
---
±
100
nA
gfs
Forward Transconductance
VDS=-5V , ID=-15A
---
16.4
---
S
Qg
Total Gate Charge (-4.5V)
VDS=-15V , VGS=-4.5V , ID=-15A
---
11.1
15.5
nC
Qgs
Gate-Source Charge
---
2.67
3.7
Qgd
Gate-Drain Charge
---
3.26
4.6
Td(on)
Turn-On Delay Time
VDD=-10V , VGS=-4.5V ,
RG=3.3Ω, ID=-15A
---
5.2
10.4
ns
Tr
Rise Time
---
12.8
23
Td(off)
Turn-Off Delay Time
---
28.8
58
Tf
Fall Time
---
16
32
Ciss
Input Capacitance
VDS=-15V , VGS=0V , f=1MHz
---
857
1200
pF
Coss
Output Capacitance
---
114
160
Crss
Reverse Transfer Capacitance
---
108
151
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current
1,4
VG=VD=0V , Force Current
---
---
-18.4
A
ISM
Pulsed Source Current
2,4
---
---
-50
A
VSD
Diode Forward Voltage
2
VGS=0V , IS=-1A , TJ=25℃
---
---
-1
V
trr
Reverse Recovery Time
IF=-15A , dI/dt=100A/µs ,
TJ=25℃
---
11.6
---
nS
Qrr
Reverse Recovery Charge
---
2.6
---
nC
Note :
1.The data tested by surface mounted on a 1 inch
2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦ 300us , duty cycle ≦ 2%
3.The power dissipation is limited by 150℃ junction temperature
4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Diode Characteristics
UD2401



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