TIC108A, TIC108B, TIC108C, TIC108D, TIC108E, TIC108M,

TIC108N, TIC108S

02/10/2012

COMSET SEMICONDUCTORS

SEMICONDUCTORS

THERMAL CHARACTERISTICS

Symbol

Ratings

Value

Unit

Gate-controlled

Turn-on time

2.9

µs

Circuit-communicated

Turn-off time

13.3

Junction to case thermal resistance

≤ 3.5

°C/W

Junction to free air thermal resistance

≤ 62.5

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min

Typ Max Unit

Repetitive peak off-state

current

-

-

400

µA

Repetitive peak reverse

current

-

-

1

mA

Gate trigger current

0.2

-

200

µA

Gate trigger voltage

-

-

1.2

V

0.4

0.6

1

0.2

-

-

Holding current

-

-

10

mA

-

-

15

Peak on-state voltage

-

-

1.7

V

dv/dt

Critical rate of rise of off-state

voltage

-

80

-

V/µs