BUZ71 datasheet(2/3 Pages) COMSET

номер детали	BUZ71

подробное описание детали	N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

PDF	3 Pages

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производитель	COMSET [Comset Semiconductor]

домашняя страница	http://comset.halfin.com

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2 / 3 page

BUZ71

01/10/2012

COMSET SEMICONDUCTORS

2/3

SEMICONDUCTORS

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min

Typ

Max

Unit

VDSS

Drain-Source Breakdown

Voltage

ID= 250 µA, VGS= 0 V

VGS(th)

Gate-threshold Voltage

ID=1 mA, VGS= VDS

2.1

IDSS

Zero Gate Voltage Drain

Current

VDS= 50 V, VGS= 0 V

Tj= 25 °C

µA

VDS= 50 V, VGS= 0 V

Tj= 125 °C

100

IGSS

Gate-Source leakage

Current

VGS= 20 V, VDS= 0 V

100

RDS(on)

Drain-Source on Resistance

ID= 9 A, VGS= 10 V

0.08

0.1

Ω

DYNAMIC CHARACTERISTICS

Symbol

Ratings

Test Condition(s)

Min

Typ

Max

Unit

gfs

Transconductance

VDS = 2*ID*RDS(on)max

ID= 9 A

7.7

CISS

Input Capacitance

VGS= 0 V, VDS= 25 V

f= 1MHz

450

600

COSS

Output Capacitance

220

350

CRSS

Reverse transfer

Capacitance

150

td(on)

Turn-on Delay Time

VDD= 30 V, VGS= 10 V

ID= 3 A, RGS= 50 Ω

Rise time

td(off)

Turn-off Delay Time

Fall Time

REVERSE DIODE

Symbol

Ratings

Test Condition(s)

Min

Typ

Max

Unit

Inverse Diode Continuous

Forward Current.

TC = 25°C

ISM

Inverse diode direct current,

pulsed.

TC = 25°C

VSD

Inverse Diode Forward

voltage

VGS = 0 V, IF = 28 A

1.5

1.8

Trr

Reverse Recovery Time

VDD = 30 V, IF = 14 A

di/dt = 100 A/µs

TC = 150°C

Qrr

Reverse Recovery Charge

0.1

µC

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