BD684 datasheet(2/3 Pages) COMSET

номер детали	BD684

подробное описание детали	SILICON DARLINGTON POWER TRANSISTORS

PDF	3 Pages

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производитель	COMSET [Comset Semiconductor]

домашняя страница	http://comset.halfin.com

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2 / 3 page

PNP BD684 – BD684A

23/10/2012

COMSET SEMICONDUCTORS

2 | 3

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min

Typ

Max

Unit

ICBO

Collector cut-off current

IE=0, VCB= -120 V

-0,2

IE=0, VCB= -120V, Tj= 150°C

-2

ICEO

Collector cut-off current

IB=0,VCE= -1/2VCEOMAX

-0,5

IEBO

Emitter cut-offcurrent

IC=0, VEB=-5 V

-5

VCE(SAT)

Collector-Emitter saturation

Voltage (*)

IC=-1.5 A

IB=-30 mA

BD683

-2,5

IC=-2 A, IB=-40 mA

BD683A

-2,8

hFE

DC Current Gain (*)

VCE=-3 V, IC=-1.5 A

BD683

750

VCE=-3 V, IC=-2 A

BD683A

VBE

Base-Emitter Voltage (*)

VCE=-3 V, IC=-1.5 A

BD683

-2,5

VCE=-3 V, IC=-2 A

BD683A

hfe

Small signal current gain

VCE=-3 V, IC=-1.5 A, f= 1 MHz

fhfe

Ut-off frequency

VCE=-3 V, IC=-1.5 A

kHz

Diode forward voltage

IF=-1,5 A

-1,5

I(SB)

Second-breakdown

collector current

VCE=-50 V, tP= 20ms, non rep.

without heatsink

-0,8

ton

Turn-on time

Icon= -1.5A, Ibon= -Iboff= -6mA

VCC=-30V

0,8

µs

toff

Turn-off time

4,5

(*) Measured under pulse conditions :tP <300µs, δ <2%.

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