2N6285 datasheet(2/3 Pages) COMSET

номер детали	2N6285

подробное описание детали	PNP DARLINGTON POWER SILICON TRANSISTOR

PDF	3 Pages

Scroll/Zoom	100%

производитель	COMSET [Comset Semiconductor]

домашняя страница	http://comset.halfin.com

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2 / 3 page

2N6285 – 2N6286 – 2N6287

04/12/2012

COMSET SEMICONDUCTORS

2/3

THERMAL CHARACTERISTICS

Symbol

Ratings

Value

Unit

RthJ-C

Thermal Resistance Junction-Case

1.09

°C/W

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min

Typ

Max

Unit

VCEO(SUS)

Collector-Emitter

Breakdown Voltage

(*)

IC= -200 m A

IB= 0

2N6285

-60

2N6286

-80

2N6287

-100

ICEO

Collector Cutoff

Current

VCE= -30 V, IB= 0

2N6285

-1

VCE= -40 V, IB= 0

2N6286

VCE= -50 V, IB= 0

2N6287

IEBO

Emitter Cutoff

Current

VBE= -5 V, IC= 0

2N6285

-2

2N6286

2N6287

ICEX

Collector Cutoff

Current

VCE= -60 V, VBE= 1.5 V

2N6285

-500

µA

VCE= -80 V, VBE= 1.5 V

2N6286

VCE= -100 V, VBE= 1.5 V 2N6287

VCE= 60 V, VBE= 1.5 V

TC = 150°C

2N6285

-5

VCE= -80 V, VBE= 1.5 V

TC = 150°C

2N6286

VCE= -100 V, VBE= 1.5 V

TC = 150°C

2N6287

VCE(SAT)

Collector-Emitter

saturation Voltage (*)

IC= -10 A, IB= -40 mA

2N6285

-2

2N6286

2N6287

VCE(SAT)

Collector-Emitter

saturation Voltage (*)

IC= -20 A, IB= -200 mA

2N6285

-3

2N6286

2N6287

VBE(SAT)

Base-Emitter

saturation Voltage (*)

IC= -20 A, IB= -200 mA

2N6285

-4

2N6286

2N6287

VBE

Base-Emitter Voltage

(*)

VCE= -3 V, IC= -10 A

2N6285

-2,8

2N6286

2N6287

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