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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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2N2906 датащи(PDF) 2 Page - Comset Semiconductor |
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2N2906 датащи(HTML) 2 Page - Comset Semiconductor |
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2 / 3 page  PNP 2N2906 – 2N2906A 01/10/2012 COMSET SEMICONDUCTORS 2 | 3 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) Min Typ Max Unit ICBO Collector Cutoff Current VCB= -50 V IE= 0 Ta= 25°C 2N2906A - - -10 nA 2N2906 - - -20 ICBO Collector Cutoff Current Ta= 150°C 2N2906A - - -10 µA 2N2906 - - -20 IEBO Emitter Cutoff Current (*) VEB= -5 V, IC= 0 2N2906A - - -50 nA 2N2906 VCEO Collector Emitter Breakdown Voltage IC= -10 mA, IB= 0 2N2906A -60 - - V 2N2906 -40 - - VCBO Collector Base Breakdown Voltage IC= -10 µA, IE= 0 2N2906A -60 - - V 2N2906 VEBO Emitter Base Breakdown Voltage IE= -10 µA, IC= 0 2N2906A -5 - - V 2N2906 hFE DC Current Gain IC= -0.1 mA, VCE= -10 V 2N2906A 40 - - - 2N2906 20 - - IC= -1 mA, VCE= -10 V 2N2906A 40 - - 2N2906 25 - - IC= -10 mA, VCE= -10 V 2N2906A 40 - - 2N2906 35 - - IC= -150 mA, VCE= -10 V 2N2906A 40 - 120 2N2906 IC= -500 mA, VCE= -10 V 2N2906A 40 - - 2N2906 20 - - VCE(SAT) Collector-Emitter saturation Voltage (*) IC= -150 mA, IB= -15 mA 2N2906A - - -0.4 V 2N2906 IC= -500 mA, IB= -50 mA 2N2906A - - -1.6 2N2906 VBE(SAT) Base-Emitter saturation Voltage (*) IC= -150 mA, IB= -15 mA 2N2906A - - -1.3 2N2906 IC= -500 mA, IB= -50 mA 2N2906A - - -2.6 2N2906 fT Transition frequency IC=-50 mA, VCE=-20 V f= 100MHz (*) 2N2906A 200 - - MHz 2N2906 td Delay time IC=-150 mA ,IB =-15 mA -VCC=-30 V 2N2906A - - 10 ns tr Rise time 2N2906 - - 40 Cc Collector capacitance IE= Ie = 0 ,VCB= -10 V f = 1 MHz 2N2906A - - 8 pF 2N2906 Ce Emitter capacitance IC= Ic = 0 ,VEB= -2 V f = 1 MHz 2N2906A - - 30 pF 2N2906 (*) Pulse conditions : tp < 300 µs, δ =2% |
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