2N2102 datasheet(2/3 Pages) COMSET

номер детали	2N2102

подробное описание детали	MEDIUM POWER AMPLIFIER & SWITCH

PDF	3 Pages

Scroll/Zoom	100%

производитель	COMSET [Comset Semiconductor]

домашняя страница	http://comset.halfin.com

Logo

2 / 3 page

NPN 2N2102

2 | 3

24/09/2012

COMSET SEMICONDUCTORS

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min

Typ

Max

Unit

ICBO

Collector Cutoff Current

VCB= 60 V

IE= 0

Tamb= 25°C

Tamb= 150°C

µA

IEBO

Emitter Cutoff Current

VEB= 5 V, IC= 0

VCBO

Collector Base

Sustaining Voltage

IC= 100 µA, IE= 0

120

VCEO

Collector Emitter

Sustaining Voltage (*)

IC= 30 mA, IB= 0

hFE

DC Current Gain (*)

IC= 10 µA, VCE= 10 V

IC= 0.1 mA, VCE= 10 V

IC= 10 mA, VCE= 10 V

IC= 150 mA, VCE= 10 V

120

IC= 500 mA, VCE= 10 V

IC= 1 A, VCE= 10 V

VCE(SAT)

Collector-Emitter

saturation Voltage (*)

IC= 150 mA, IB= 15 mA

0.5

VBE(SAT)

Base-Emitter saturation

Voltage (*)

IC= 150 mA, IB= 15 mA

1.1

Collector Capacitance

IE= 0 ,VCB= 10 V

f = 1MHz

emitter Capacitance

IC= 0 ,VEB= 0.5 V

f = 1MHz

(*) Pulse conditions : tp < 300

µs, δ =2%.

2N2102 датащи(PDF) 2 Page - Comset Semiconductor

2N2102 датащи(HTML) 2 Page - Comset Semiconductor

Html Pages

1 2 3

датащи скачать

ссылки URL