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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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WM8850GEFL/V датащи(PDF) 21 Page - Wolfson Microelectronics plc |
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WM8850GEFL/V датащи(HTML) 21 Page - Wolfson Microelectronics plc |
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21 / 223 page  Pre-Production WM8850 w PP, April 2011, Rev 3.2 21 Test Conditions AVDD = CPVDD = 5V, DBVDD = 3.3V, DCVDD = 1.8V, TA = +25 oC, 1kHz signal, fs = 48kHz, 24-bit data unless otherwise stated. PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT DAC2 Path Performance (VOUT2LP, VOUT2LN, VOUT2RP and VOUT2N into 10kΩ Line Load) DAC3 Path Performance (VOUT3LP, VOUT3LN, VOUT3RP and VOUT3N into 10kΩ Line Load) Signal to Noise Ratio SNR Unweighted 103 dB A-weighted 100 106 dB A-weighted fs=96kHz 106 dB Out of Band Signal to Noise Ratio (0.6fs to 150kHz) OBSNR Fs > 11.025kHz 80 dB Fs <= 11.025kHz 75 dB Dynamic Range DNR A-weighted -60dBFS 106 dB Total Harmonic Distortion THD 0dBFS -92 dB 0dBFS fs=96kHz -92 dB Channel Separation 20Hz to 20kHz 102 dB Channel Level Matching 0dBFS 0.1 dB Channel Phase Deviation 0.01 ° AVDD Power Supply Rejection Ratio AVDD PSRR 1kHz, 100mVpp on AVDD 75 dB 20Hz to 20kHz, 100mVpp on AVDD 55 dB |
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