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E88Z13D5X-TE

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any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the

operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.

Description

DM-232 a magnetic sensor using magnetoresist-

ance effect is composed of ferromagnetic material

deposited by evaporation on a silicon substrate. It is

suitable for angle of rotation detection.

Features

• Low magnetic field and high sensitivity: bridge type

stands for large output voltage

• Fitted with bias magnet: stable output.

• High reliability: Achieved through silicon nitride

protective film.

Structure

Ferromagnetic thin film circuit (With ferrite magnet)

Applications

• Non-contact angle of rotation detection.

• Contactless potentiometer.

Absolute Maximum Ratings (Ta=25 °C)

• Supply voltage

10

V

• Storage temperature

Tstg

–30 to +100

°C

Recommended Operating Conditions

• Supply voltage

5V

• Operating temperature

Topr

–20 to + 75

°C

Magnetoresistance Element

M-118

(Plastic)

DM-232

Electrical Characteristics

Ta=25 °C

Item

Symbol

Condition

Min.

Typ.

Max.

Unit

Output voltage

Midpoint potential

Midpoint potential

difference/Output voltage

Total resistance

AC magnetic field

θ =0 °

H=14400A/m (Peak)

AC magnetic field

θ =0 °

150

2.475

500

650

2.525

15

800

mVp-p

V

%

Ω

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