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SICF3SV2 датащи(PDF) 2 Page - SEC Electronics Inc. |
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SICF3SV2 датащи(HTML) 2 Page - SEC Electronics Inc. |
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2 / 4 page ![]() Current Sensors SICF3SV2 2 V2.00 May 1, 2012 General Description For the electronic measurement of currents: DC, AC, pulsed, mixed, with a galvanic isolation between the primary circuit (high power) and the secondary circuit (electronic circuit) Parameters Table PARAMETERS SYMBOL UNIT VALUE CONDITIONS Electrical data Supply voltage(±5%) VC V ±15 Current consumption IC mA 22+Is 50 IPN=100A 100 IPN=200A Secondary nominal r.m.s. current ISN mA 150 IPN=300A Conversion ratio KN 1:2000 R. m. s voltage for AC isolation test Vd KV 6 @50Hz, 1 min Accuracy - Dynamic performance data Linearity εL % <±0.1 Accuracy XG % <±0.5 @ IPN , TA = 25°C Offset current IO mA <±0.2 @ IP = 0,TA = 25°C Thermal drift of Io IOT mA ±0.6 @ IP = 0,-10~+70°C Response time tr µS <1 @ 90% of IPN step di/dt accurately followed di/dt A/µS >100 Frequency bandwidth (1) BW kHz DC~100 @-3dB General data Ambient operating temperature TA ℃ -40 ~ +85 Ambient storage temperature TS ℃ -40 ~ +105 Secondary coil resistance Rs Ω 28 @ TA = 70°C Notes: 1) Please refer to derating curves in the technical file to avoid excessive core heating at high frequency. |
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