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UT138FF/FG-5 датащи(PDF) 2 Page - Unisonic Technologies

номер детали UT138FF/FG-5
подробное описание детали  Glass passivated triacs in a full pack plastic envelope, intended for use in applications requiring high bidirectional transient and blocking voltage capability and high thermal cycling performance.
PDF  5 Pages
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производитель  UTC [Unisonic Technologies]
домашняя страница  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UT138FF/FG-5 датащи(HTML) 2 Page - Unisonic Technologies

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UTC UT138FF/FG
TRIAC
UTC UNISONIC TECHNOLOGIES CO., LTD. 2
QW-R401-020,B
ISOLATION LINITING VALUE & CHARACTERISTIC(Ths=25°C,unless otherwise specified)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
R.M.S. isolation voltage form all three terminals to
external heatsink (f=50-60Hz, sinusoidal waveform
R.H.≦65%,clean and dustfree)
Visol
1500
V
Capacitance from MT2 to external heatsink (f=1MHz)
Cisol
12
pF
THERMAL RESISTANCES
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
Thermal Resistance, Junction to heatsink
(full or half cycle)
with heatsink compound
without heatsink compound
Rthj-hs
4.0
5.5
K/W
Thermal Resistance, Junction to Ambient
In free air
Rthj-a
55
K/W
STATIC CHARACTERISTICS (Tj=25°C,unless otherwise specified)
MAX
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
UT138FF UT138FG
UNIT
Gate trigger current
IGT
VD=12V, IT=0.1A
T2+ G+
T2+ G-
T2- G-
T2- G+
5
8
10
22
25
25
25
70
50
50
50
100
mA
Latching current
IL
VD=12V, IGT=0.1A
T2+ G+
T2+ G-
T2- G-
T2- G+
7
20
8
10
40
60
40
60
60
90
60
90
mA
Holding current
IH
VD = 12 V, IGT = 0.1 A
6
30
60
mA
On-state voltage
VT
IT=15A
1.4
1.65
V
VD=12V, IT=0.1A
0.7
1.5
V
Gate trigger voltage
VGT
VD=400V, IT=0.1A, Tj=125
°C
0.25
0.4
V
Off-state leakage current
ID
VD=VDRM(max) , Tj=125
°C
0.1
0.5
mA
DYNAMIC CHARACTERISTICS(Tj=25°C,unless otherwise specified)
MIN
PARAMETER
SYMBOL
CONDITIONS
UT138FF UT138FG
TYP MAX UNIT
Critical rate of change of
Off-state voltage
dVD /dt
VDM = 67% VDRM(max), Tj =125°C;
exponential waveform, gate open
circuit
100
200
250
V/µs
Critical rate of change of
Commutating voltage
dVcom/dt
VDM=400V;Tj=95°C,IT(RMS)=12A;
dIcom /dt =5.4A/ms, gate open
circuit
20
V/µs
Gate controlled turn-on
time
tgt
ITM=16 A, VD= VDRM(max) , IG=0.1A;
dIG/dt=5A/µs
2
µs



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