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HDMI05-CL02F3 датащи(PDF) 2 Page - STMicroelectronics |
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HDMI05-CL02F3 датащи(HTML) 2 Page - STMicroelectronics |
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2 / 9 page ![]() Characteristics HDMI05-CL02F3 2/9 Doc ID 15516 Rev 2 1 Characteristics Figure 3. Electrical characteristics (definitions) Table 1. Absolute maximum ratings (Tamb = 25 °C) Symbol Parameter Value Unit VPP External pins (A1, A2, A3, B3 and C3): ESD IEC 61000-4-2, level 4 - air discharge ESD IEC 61000-4-2, level 4 - contact discharge Internal pins (B1, C1): ESD IEC 61000-4-2, level 1 - air discharge ESD IEC 61000-4-2, level 1 - contact discharge 15 8 2 2 kV Pd Line resistance power dissipation at 70 °C 60 mW Top Operating temperature range -30 to + 85 °C Tstg Storage temperature range -55 to + 150 °C Table 2. Electrical characteristics (Tamb = 25 °C) Symbol Test condition Min. Typ. Max. Unit VBR IR = 1 mA 6 20 V IRM VRM = 3 V per line 50 200 nA R1, R2 1575 1750 1925 Ω R3 80 100 120 k Ω R4 22 27 32 k Ω Cline Vline = 0 V, Vosc = 30 mV, F = 1 MHz CEC to GND with RPU2 not connected SCL and SDA to GND with RPU not connected (measured under zero light conditions) 14 24 17 29 pF Cline (1) 1. This is the line capacitance seen by the data signals in the application conditions Vline = 0 V, Vosc = 30 mV, F = 1 MHz CEC, SCL and SDA to GND with RPU and RPU2 grounded (measured under zero light conditions) 10 12 pF I V I F I RM I R I PP V RM V F V BR V CL Slope = 1/Rd Symbol Parameter V = Breakdown voltage I = Leakage current @ V V = Stand-off voltage V = Clamping voltage R = Dynamic impedance I = Peak pulse current I = Breakdown current T = Voltage temperature coefficient V = Forward voltage drop BR RM RM RM CL d PP R F α C = Line capacitance = line R Series resistance between Input I/O |
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