STPS30H100C datasheet(3/10 Pages) STMICROELECTRONICS

номер детали	STPS30H100C

подробное описание детали	High voltage power Schottky rectifier

PDF	10 Pages

Scroll/Zoom	100%

производитель	STMICROELECTRONICS [STMicroelectronics]

домашняя страница	http://www.st.com

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3 / 10 page

STPS30H100C

Characteristics

Doc ID 6347 Rev 8

3/10

Figure 1.

Average forward power dissipation

versus average forward current (per

diode)

Figure 2.

Average forward current versus

ambient temperature (

δ = 0.5, per

diode)

(W)

F(AV)

2468

δ=tp/T

(A)

F(AV)

δ = 1

δ = 0.05

δ = 0.1

δ = 0.2

δ = 0.5

(A)

F(AV)

100

125

150

175

δ=tp/T

(°C)

amb

R=R

th(j-a)

th(j-c)

=15°C/W

th(j-a)

Figure 3.

Normalized avalanche power

derating versus pulse duration

Figure 4.

Normalized avalanche power

derating versus junction

temperature

0.001

0.01

0.1

0.01

0.1

100

1000

t (µs)

P(tp)

(1 µs)

ARM

0.2

0.4

0.6

0.8

1.2

100

125

150

T (°C)

P(Tj)

(25 °C)

ARM

Figure 5.

Non repetitive surge peak forward

current versus overload duration

(maximum values, per diode)

Figure 6.

Relative variation of thermal

impedance junction to case versus

pulse duration

1E-3

1E-2

1E-1

1E+0

100

120

140

160

180

200

220

240

δ=0.5

I (A)

t(s)

T =25°C

T =75°C

T =150°C

1E-4

1E-3

1E-2

1E-1

1E+0

0.0

0.2

0.4

0.6

0.8

1.0

Z/R

th(j-c)

δ=tp/T

t (s)

δ = 0.5

δ = 0.2

δ = 0.1

Single pulse

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