STPS30150C_10 datasheet(4/11 Pages) STMICROELECTRONICS

4 / 11 page

Characteristics

STPS30150C

4/11

Doc ID 7757 Rev 8

Figure 5.

Non repetitive surge peak forward

current vs. overload duration (max.

values, per diode)

Figure 6.

Non repetitive surge peak forward

current vs. overload duration (max.

values, per diode) (TO-220FPAB)

100

125

150

175

200

225

1.E-03

1.E-02

1.E-01

1.E+00

δ=0.5

I (A)

t(s)

Tc=50°C

Tc=75°C

Tc=125°C

TO-220AB, TO-247, D PAK

100

110

120

130

140

1.E-03

1.E-02

1.E-01

1.E+00

δ=0.5

I (A)

t(s)

Tc=50°C

Tc=75°C

Tc=125°C

TO-220FPAB

Figure 7.

Variation of thermal impedance

junction to case versus pulse

duration (per diode)

Figure 8.

Variation of thermal impedance

junction to case versus pulse

duration (per diode) (TO-220FPAB)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-03

1.E-02

1.E-01

1.E+00

δ=tp/T

δ = 0.5

δ = 0.2

δ = 0.1

Single pulse

Z/R

th(j-c)

t (s)

TO-220AB, TO-247, D PAK

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

δ=tp/T

δ = 0.5

δ = 0.2

δ = 0.1

Single pulse

Z/R

th(j-c)

t (s)

TO-220FPAB

Figure 9.

Reverse leakage current versus

reverse voltage applied (typical

values, per diode)

Figure 10.

Junction capacitance versus

reverse voltage applied (typical

values, per diode)

2550

100

125

150

1E-1

1E+0

1E+1

1E+2

1E+3

1E+4

1E+5

Tj=125°C

Tj=25°C

Tj=150°C

Tj=100°C

Tj=175°C

I (µA)

V (V)

100

200

100

1000

C(pF)

V (V)

F=1MHz

=30mV

T =25°C

OSC

RMS

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