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RF3933 датащи(PDF) 2 Page - RF Micro Devices

номер детали RF3933
подробное описание детали  90W GaN WIDE-BAND POWER AMPLIFIER
PDF  14 Pages
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производитель  RFMD [RF Micro Devices]
домашняя страница  http://www.rfmd.com
Logo RFMD - RF Micro Devices

RF3933 датащи(HTML) 2 Page - RF Micro Devices

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RF3933
DS120306
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
Absolute Maximum Ratings
Parameter
Rating
Unit
Drain Voltage (VD)150
V
Gate Voltage (VG)-8 to +2
V
Gate Current (IG)54
mA
Operational Voltage
65
V
Ruggedness (VSWR)
10:1
Storage Temperature Range
-55 to +125
°C
Operating Temperature Range (TC)-40 to +85
°C
Operating Junction Temperature (TJ)200
°C
Human Body Model
Class 1A
MTTF (TJ< 200 °C, 95% Confidence
Limits)*
3 x 106
Hours
Thermal Resistance, RTH (junction
to case) measured at
TC = 85°C, DC bias only
2.1
°C/W
* MTTF - median time to failure for wear-out failure mode (30% IDSS degradation) which is determined by the technology process reliability.
Refer to product qualification report for FIT(random) failure rate.
Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage
and current must not exceed the maximum operating values.
Bias Conditions should also satisfy the following expression: PDISS<(TJ - TC)/RTH J-C and TC = TCASE
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
Recommended Operating Conditions
Drain Voltage (VDSQ)28
48
V
Gate Voltage (VGSQ)
-4.5
-3.7
-2.5
V
Drain Bias Current
300
mA
Frequency of Operation
DC
3500
MHz
Capacitance
CRSS
7pF
VG = -8V, VD = 0V
CISS
30
pF
COSS
21
pF
DC Functional Test
IG (OFF) – Gate Leakage
2
mA
VG = -8V, VD = 0V
ID (OFF) – Drain Leakage
2.5
mA
VG = -8V, VD = 48V
VGS (TH) – Threshold Voltage
-4.2
V
VD = 48V, ID = 20mA
VDS (ON) – Drain Voltage at High
Current
0.25
V
VG = 0V, ID = .5A
RF Functional Test
[1], [2]
VGS (Q)
-3.4
V
VD= 48V, ID=300mA
Gain
10
12
dB
CW, POUT = 49.5dBm, f = 2140MHz
Drain Efficiency
55
60
%
CW, POUT = 49.5dBm, f = 2140MHz
Input Return Loss
-10
-12
dB
CW, POUT = 49.5dBm, f = 2140MHz
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free
per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric
materials and red phosphorus as a flame retardant, and <2% antimony in
solder.



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