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RF3928B датащи(PDF) 2 Page - RF Micro Devices

номер детали RF3928B
подробное описание детали  380W GaN WIDEBAND PULSED
PDF  11 Pages
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производитель  RFMD [RF Micro Devices]
домашняя страница  http://www.rfmd.com
Logo RFMD - RF Micro Devices

RF3928B датащи(HTML) 2 Page - RF Micro Devices

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RF3928B
DS120503
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
Absolute Maximum Ratings
Parameter
Rating
Unit
Drain Source Voltage
150
V
Gate Source Voltage
-8 to +2
V
Gate Current (IG)
155
mA
Operational Voltage
65
V
Ruggedness (VSWR)
3:1
Storage Temperature Range
-55 to +125
°C
Operating Temperature Range (TL)
-40 to +85
°C
Operating Junction Temperature (TJ)
250
°C
Human Body Model
Class 1A
MTTF (TJ < 200°C)
MTTF (TJ < 250°C)
3.0E + 06
1.4E + 05
Hours
Thermal Resistance, Rth (junction to case)
TC=85°C, DC bias only
TC=85°C, 100s pulse, 10% duty cycle
TC=85°C, 300s pulse, 10% duty cycle
0.90
0.18
0.25
°C/W
* MTTF – median time to failure for wear-out failure mode (30% Idss degradation) which is determined by the technology process reliability.
Refer to product qualification report for FIT (random) failure rate.
Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device
voltage and current must not exceed the maximum operating values specified in the table on page two.
Bias Conditions should also satisfy the following expression: PDISS<(TJ–TC)/RTH J-C and TC=TCASE
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
Recommended Operating
Condition
Drain Voltage (VDSQ)65
V
Gate Voltage (VGSQ)
-8-3
-2
V
Drain Bias Current
440
mA
Frequency of Operation
2800
3400
MHz
DC Functional Test
IG (OFF) – Gate Leakage
2
mA
VG=-8V, VD=0V
ID (OFF) – Drain Leakage
2
mA
VG=-8V, VD=65V
VGS (th) – Threshold Voltage
-3.5
V
VD=65V, ID=40mA
VDS (on) – Drain Voltage at high
current
0.22
V
VG=0V, ID=1.5A
RF Functional Test
[1, 2]
Small Signal Gain
13
dB
F=2900MHz, PIN=30dBm
Power Gain
11.2
11.8
dB
F=2900MHz, PIN=44dBm
Input Return Loss
-6
dB
F=2900MHz, PIN=30dBm
Output Power
55.3
56
dBm
F=2900MHz, PIN=44dBm
Drain Efficiency
45
50
%
Small Signal Gain
13
dB
F=3150MHz, PIN=30dBm
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
RoHS (Restriction of Hazardous Substances): Compliant per EU Directive
2002/95/EC.



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