1 of 11

GaAs HBT

InGaP HBT

GaAs MESFET

SiGe BiCMOS

Si BiCMOS

SiGe HBT

GaAs pHEMT

Si CMOS

Si BJT

GaN HEMT

Functional Block Diagram

RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-

mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2012, RF Micro Devices, Inc.

Product Description

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.

Ordering Information

BiFET HBT

RF IN

VG

Pin 1 (CUT)

RF OUT

VD

Pin 2

GND

BASE

RF3928

280W GaN WIDEBAND PULSED POWER

AMPLIFIER

The RF3928 is a 50V 280W high power discrete amplifier designed for S-Band

pulsed radar, Air Traffic Control and Surveillance and general purpose broadband

amplifier applications. Using an advanced high power density Gallium Nitride (GaN)

semiconductor process, these high-performance amplifiers achieve high output

power, high efficiency and flat gain over a broad frequency range in a single pack-

age. The RF3928 is a matched GaN transistor packaged in a hermetic, flanged

ceramic package. This package provides excellent thermal stability through the use

of advanced heat sink and power dissipation technologies. Ease of integration is

accomplished through the incorporation of simple, optimized matching networks

external to the package that provide wide band gain and power performance in a

single amplifier.

Features



Wideband Operation 2.8GHz to

3.4GHz



Advanced GaN HEMT Technology



Advanced Heat-Sink Technology



Supports Multiple Pulse

Conditions



10% to 20% Duty Cycle



100

s to 500s Pulse Width



Integrated Matching

Components for High Terminal

Impedances



50V Operation Typical

Performance



Pulsed Output Power 280W



Small Signal Gain 12dB



Drain Efficiency 52%



-40°C to 85°C Operating

Temperature

Applications



Radar



Air Traffic Control and

Surveillance



General Purpose Broadband

Amplifiers

DS120508



Package: Hermetic 2-Pin, Flanged Ceramic

RF3928280W

GaN WIDE-

BAND PULSED

POWER AMPLI-

FIER

RF3928S2

2-Piece sample bag

RF3928SB

5-Piece bag

RF3928SQ

25-Piece bag

RF3928SR

50 Pieces on 7” short reel

RF3928TR13

250 Pieces on 13” reel

RF3928PCBA-410

Fully assembled evaluation board 2.8GHz to 3.4GHz; 50V

operation