Characteristics

STPS8H100DEE

2/8

Doc ID 023272 Rev 1

1

Characteristics

To evaluate the conduction losses use the following equation:

2

(RMS)

Table 2.

Symbol

Parameter

Value

Unit

Repetitive peak reverse voltage

100

V

Forward rms current

15

A

Average forward current

Tc = 150 °C

= 0.5

8

A

Surge non repetitive forward current tp = 10 ms sinusoidal

100

A

P

ARM

(1)

1.

For pulse time duration deratings, please refer to Figure 3. More details regarding the avalanche energy

measurements and diode validation in the avalanche are provided in the STMicroelectronics Application

notes AN1768, “Admissible avalanche power of schottky diodes” and AN2025, “Converter improvement

using Schottky rectifier avalanche specification”.

Repetitive peak avalanche power

480

W

Storage temperature range

-65 to +175

°C

Tj

Maximum operating junction temperature

175

°C

Table 3.

Thermal resistance

Symbol

Parameter

Value

Unit

Junction to case

4

°C/W

Table 4.

Static electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

(1)

1.

Reverse leakage

current

-4.5

µA

-

2

6

mA

(2)

2.

Forward voltage drop

0.82

V

-

0.60

0.68

0.85

-

0.62

0.70

0.90

-

0.68

0.75