1 of 11

Optimum Technology Matching® Applied

GaAs HBT

InGaP HBT

GaAs MESFET

SiGe BiCMOS

Si BiCMOS

SiGe HBT

GaAs pHEMT

Si CMOS

Si BJT

GaN HEMT

Functional Block Diagram

RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-

mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2012, RF Micro Devices, Inc.

Product Description

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.

Ordering Information

BiFET HBT

RF IN

Pin 2,3

RF OUT / VDS

Pin 6,7

GND

BASE

VGS

Pin 1

RFHA1006

225MHz TO 1215MHz, 9W GaN WIDEBAND

POWER AMPLIFIER

The RFHA1006 is a wideband Power Amplifier designed for CW and pulsed applica-

tions such as wireless infrastructure, RADAR, two way radios and general purpose

amplification. Using an advanced high power density Gallium Nitride (GaN) semi-

conductor process, these high-performance amplifiers achieve high efficiency, flat

gain, and large instantaneous bandwidth in a single amplifier design. The

RFHA1006 is an input matched GaN transistor packaged in an air cavity ceramic

package which provides excellent thermal stability through the use of advanced

heat sink and power dissipation technologies. Ease of integration is accomplished

through the incorporation of optimized input matching network within the package

that provides wideband gain and power performance in a single amplifier. An exter-

nal output match offers the flexibility of further optimizing power and efficiency for

any sub-band within the overall bandwidth.

Features



Advanced GaN HEMT Technology



Output Power of 9W



Advanced Heat-Sink Technology



225MHz to 1215MHz

Instantaneous Bandwidth



Input Internally Matched to 50





28V Operation Typical

Performance



Output Power 39.5dBm



Gain 16dB



Power Added Efficiency 60%



-40°C to 85°C Operating

Temperature



Large Signal Models Available

Applications



Class AB Operation for Public

Mobile Radio



Power Amplifier Stage for

Commercial Wireless

Infrastructure



General Purpose Tx Amplification



Test Instrumentation



Civilian and Military Radar

DS120418



Package: AlN Leadless Chip Carrier / SO8

RFHA1006

225MHz to

1215MHz, 9W

GaN Wide-

band Power

Amplifier

RFHA1006S2

2-Piece sample bag

RFHA1006SB

5-Piece bag

RFHA1006SQ

25-Piece bag

RFHA1006SR

100 Pieces on 7” short reel

RFHA1006TR7

750 Pieces on 7” reel

RFHA1006PCBA-410

Fully assembled evaluation board 225MHz to 1215MHz;

28V operation