RFHA1003 datasheet(2/11 Pages) RFMD

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RFHA1003

DS120216

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.

Absolute Maximum Ratings

Parameter

Rating

Unit

Drain Voltage (VD)150

Gate Voltage (VG)-8 to +2

Gate Current (IG)5

Operational Voltage

RF- Input Power

dBm

Ruggedness (VSWR)

12:1

Storage Temperature Range

-55 to +125

°C

Operating Temperature Range (TL)

-40 to +85

°C

Operating Junction Temperature (TJ)200

°C

Human Body Model

Class 1C

MTTF (TJ < 200°C, 95% Confidence Limits)*

3 x 106

Hours

Thermal Resistance, RTH (junction to case)

measured at TC = 85°C, DC bias only

9.8

°C/W

* MTTF - median time to failure for wear-out failure mode (30% IDSS degradation) which is determined by the technology process reliability.

Refer to product qualification report for FIT(random) failure rate.

Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage

and current must not exceed the maximum operating values specified in the table on page two.

Bias Conditions should also satisfy the following expression: PDISS < (TJ - TC)/RTH J - C and TC = TCASE

Parameter

Specification

Unit

Condition

Min.

Typ.

Max.

Recommended Operating

Conditions

Drain Voltage (VDSQ)28

Gate Voltage (VGSQ)

-5-3-2

Drain Bias Current

RF Input Power (PIN)25

dBm

Input Source VSWR

10:1

RF Performance Characteristics

Frequency Range

512

MHz

Small signal 3dB bandwidth

Linear Gain

POUT = 30dBm, 100MHz

Power Gain

P3DB, 100MHz

Gain Flatness

POUT = 30dBm, 30MHz to 2500MHz

Gain Variation with Temperature

-0.02

dB/°C

Input Return Loss (S11)-10

Output Power (P3dB)

39.5

dBm

30MHz to 512MHz

Power Added Efficiency (PAE)

30MHz to 512MHz

Caution! ESD sensitive device.

Exceeding any one or a combination of the Absolute Maximum Rating conditions may

cause permanent damage to the device. Extended application of Absolute Maximum

Rating conditions to the device may reduce device reliability. Specified typical perfor-

mance or functional operation of the device under Absolute Maximum Rating condi-

tions is not implied.

The information in this publication is believed to be accurate and reliable. However, no

responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any

infringement of patents, or other rights of third parties, resulting from its use. No

license is granted by implication or otherwise under any patent or patent rights of

RFMD. RFMD reserves the right to change component circuitry, recommended appli-

cation circuitry and specifications at any time without prior notice.

RoHS (Restriction of Hazardous Substances): Compliant per EU Directive

2002/95/EC.

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