1 of 15

Optimum Technology Matching® Applied

GaAs HBT

InGaP HBT

GaAs MESFET

SiGe BiCMOS

Si BiCMOS

SiGe HBT

GaAs pHEMT

Si CMOS

Si BJT

GaN HEMT

Functional Block Diagram

RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-

mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2012, RF Micro Devices, Inc.

Product Description

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.

BiFET HBT

RF IN

Pin 2,3

RF OUT / VDS

Pin 6,7

GND

BASE

VGS

Pin 1

RF3826

30MHz TO 2500MHz, 9W GaN WIDEBAND

POWER AMPLIFIER

The RF3826 is a wideband Power Amplifier designed for CW and pulsed applica-

tions such as wireless infrastructure, RADAR, two way radios and general purpose

amplification. Using an advanced high power density Gallium Nitride (GaN) semi-

conductor process, these high-performance amplifiers achieve high efficiency, flat

gain and large instantaneous bandwidth in a single amplifier design. The RF3826

is an input matched GaN transistor packaged in an air cavity ceramic package

which provides excellent thermal stability through the use of advanced heat sink

and power dissipation technologies. Ease of integration is accomplished through

the incorporation of optimized input matching network within the package that pro-

vides wideband gain and power performance in a single amplifier. An external out-

put match offers the flexibility of further optimizing power and efficiency for any

sub-band within the overall bandwidth.

Features



Advanced GaN HEMT Technology



Output Power of 9W



Advanced Heat-Sink Technology



30MHz to 2500MHz

Instantaneous Bandwidth



Input Internally Matched to 50





28V Operation Typical

Performance





Gain 12dB



Power Added Efficiency 45%

(30MHz to 2500MHz)



Power Added Efficiency 50%

(200MHz to 1800MHz)



-40°C to 85°C Operating

Temperature



Large Signal Models Available

Applications



Class AB Operation for Public

Mobile Radio



Power Amplifier Stage for

Commercial Wireless

Infrastructure



General Purpose Tx Amplification



Test and Instrumentation



Civilian and Military Radar

DS120418



Package: AlN Leadless Chip Carrier / SO8

RF3826

30MHz to

2500MHz, 9W

GaN Wide-

band Power

Amplifier