M63840FP datasheet(2/6 Pages) MITSUBISHI

2 / 6 page

8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE

SOURCE TYPE

M63840FP

2012.May

-2.0

-1.3

—

IF = -350mA

Clamping diode forward

voltage

5.0

180

—

VI = 3.85V

μA

100

—

VR = 40V

Clamping diode reverse current

2.5

—

VS = 40V, VI = 2V (all input)

Supply current

μA

—

VI = 2.4V

Input current

2.0

1.5

—

VS = 10V, VI = 2.0V, IO = -100mA

2.0

1.7

—

VS = 10V, VI = 2.0V, IO = -350mA

Collector-emitter saturation

voltage

VCE(sat)

μA

100

—

VS = 40V, VI = 0.8V

Supply leak current

IS(leak)

max

typ

min

Unit

Limits

Test conditions

Parameter

Symbol

ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = 25℃）

Duty Cycle

no more than 5%

0.8

－

“L” input voltage

VIL

－

2.0

“H” input voltage

VIH

-100

－

Duty Cycle

no more than 30%

-350

－

Output current (Current per 1

circuit when 8 circuits are

coming on simultaneously)

－

Supply voltage

max

typ

min

Unit

Limits

Parameter

Symbol

RECOMMENDED OPERATING (Unless otherwise noted, Ta = –40 ~ +85℃)

SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25

℃）

ｎｓ

—

2200

—

Turn-off time

toff

ｎｓ

—

210

—

CL = 15pF（note 1）

Turn-on time

ton

max

typ

min

Unit

Limits

Test conditions

Parameter

Symbol

# : Unused Input pins must be connected to GND.

NOTE 1 TEST CIRCUIT

TIMING DIAGRAM

OUTPUT

INPUT

50%

ｔon

50%

ｔoff

50Ω

INPUT

OUTPUT

Measured

device

(1) Pulse generator (PG) characteristics: PRR = 1kHz,

tw = 10ms, tr = 6ns, tf = 6ns, ZO = 50Ω ,VI = 0 to 2V

(2) Input-output conditions : RL = 30Ω, VS = 10V

(3) Electrostatic capacity CL includes floating capacitance at

connections and input capacitance at probes

M63840FP датащи(PDF) 2 Page - Mitsubishi Electric Semiconductor

M63840FP датащи(HTML) 2 Page - Mitsubishi Electric Semiconductor

Html Pages

1 2 3 4 5 6

датащи скачать

ссылки URL