ACE2303B

P-Channel Enhancement Mode Field Effect Transistor

VER 1.2

1

Description

This P-Channel enhancement mode power FETs are produced with high cell density, DMOS trench

technology, which is especially used to minimize on-state resistance. This device is particularly suited for

low voltage application such as portable equipment, power management and other battery powered

circuits, and low in-line power loss are needed in a very small outline surface mount package.

Features

DS

=-30V

DS(ON)

58m

Ω @ V

DS(ON)

87m

Ω @ V

DS(ON)

Absolute Maximum Ratings

Parameter

Symbol

Max

Unit

Drain-Source Voltage

-30

V

Gate-Source Voltage

±20

V

Drain Current

Continuous

-3.6

A

Pulsed

(1)

-10

Power Dissipation

25

1.4

W

Packaging Type

SOT-23-3L

3

1

2

Ordering information

ACE2303B XX + H

SOT-23-3L

Description

1

Gate

2

Source

3

Drain

BM : SOT-23-3L

Pb - free

Halogen - free