TSM5NB50 datasheet(2/9 Pages) TSC

2 / 9 page

TSM5NB50

500V N-Channel Power MOSFET

2/9

Version: A12

Electrical Specifications (Ta = 25

oC unless otherwise noted)

Parameter

Conditions

Symbol

Min

Typ

Max

Unit

Static

Drain-Source Breakdown Voltage

VGS = 0V, ID = 250uA

BVDSS

500

Drain-Source On-State Resistance

VGS = 10V, ID = 2.2A

RDS(ON)

1.2

1.5

Ω

Gate Threshold Voltage

VDS = VGS, ID = 250uA

VGS(TH)

2.5

3.5

4.5

Zero Gate Voltage Drain Current

VDS = 500V, VGS = 0V

IDSS

Gate Body Leakage

VGS = ±30V, VDS = 0V

IGSS

±100

Forward Transfer Conductance

VDS = 10V, ID = 2.2A

gfs

3.5

Dynamic

Total Gate Charge

VDS = 300V, ID = 4.4A,

VGS = 10V

(Note 4,5)

12.4

Gate-Source Charge

Qgs

2.9

Gate-Drain Charge

Qgd

5.5

Input Capacitance

VDS = 25V, VGS = 0V,

f = 1.0MHz

Ciss

552

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Switching

Turn-On Delay Time

VGS = 10V, ID = 4.4A,

VDD = 300V, RG =25Ω

(Note 4,5)

td(on)

Turn-On Rise Time

Turn-Off Delay Time

td(off)

Turn-Off Fall Time

Source-Drain Diode Ratings and Characteristic

Source Current

Integral reverse diode in

the MOSFET

4.4

Source Current (Pulse)

ISM

Diode Forward Voltage

IS = 4.4A, VGS = 0V

VSD

0.9

1.5

Note 1: Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature

Note 2: VDD = 50V, IAS=2.2A, L=40mH, RG =25Ω, Starting TJ=25ºC

Note 3: ISD≤4A, di/dt≤200A/uS, VDD≤BVDSS, Starting TJ=25ºC

Note 4: Pulse test: pulse width ≤300uS, duty cycle ≤2%

Note 5: Essentially Independent of Operating Temperature

TSM5NB50 датащи(PDF) 2 Page - Taiwan Semiconductor Company, Ltd

TSM5NB50 датащи(HTML) 2 Page - Taiwan Semiconductor Company, Ltd

Html Pages

1 2 3 4 5 6 7 8 9

датащи скачать

ссылки URL