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BL8593 датащи(PDF) 2 Page - SHANGHAI BELLING CO., LTD.

номер детали BL8593
подробное описание детали  P-Channel MOSFET with 0.12V Schottky Diode
PDF  6 Pages
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производитель  BELLING [SHANGHAI BELLING CO., LTD.]
домашняя страница  http://www.belling.com.cn
Logo BELLING - SHANGHAI BELLING CO., LTD.

BL8593 датащи(HTML) 2 Page - SHANGHAI BELLING CO., LTD.

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BL8593
ABSOLUTE MAXIMUM RATING
Parameter
Symbol
5 sec
Steady State
Unit
Forward Voltage(Source-Drain)
VSD
12
V
Gate-Source Voltage (MOSFET)
VGS
-8~+0.3
-8~+0.3
Continuous Drain Current
ID
0.8
0.5
mA
Pulsed Drain Current (MOSFET)
IDM
1
A
Maximum Power Dissipation
PD
1
0.5
W
Operating Junction Temperature Range
TJ
−20 to 125
C
Storage Temperature Range
Tstg
-40 to 150
Soldering Recommendations (Peak Temperature)
260C, 10s
THERMAL RESISTANCE RATING
Parameter
Device
Symbol
Typical
Maximum
Unit
junction-to-Ambient
t ≤ 5 sec
DFN2x2
RthJA
50
60
C /W
DFN1x1
77
95
SC70-5
250
280
Steady State
DFN2x2
105
120
DFN1x1
160
200
SC70-5
330
400
Junction to Case
Steady State
DFN2x2
RthJC
20
30
DFN1x1
33
40
SC70-5
150
175
ELECTRICAL CHARACTERISTICS
Tj=25C
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Vth
Threshold Voltage
Ids=-10uA, Vds=Vgs
-1.0
-0.7
-0.4
V
Igs
Gate-Source Leakage current
Vgs=8V
0
12
20
uA
IDss1
PMOS off-state leakage
Vgs=0, Vs=9V, Vd=0V
0.5
5
uA
IDss2
PMOS reverse block leakage
Vg=0, Vs=0V, Vd=4.5V
2
10
uA
Idson
On –state drain current
Vs=5V, Vg=1V, Vd=4V
-800
-650
-500
mA
Rdson
Vds/Idson
Vs=5V, Vg=1V, Vd=4V
1.25
1.5
2
ohm
Vfsbd
Forward voltage of schottky
Vs=4V, Vg=0V, Ids=0,
0.08
0.12
0.16
V



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