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IS66/67WV51216DBLL датащи(PDF) 7 Page - Integrated Silicon Solution, Inc

номер детали IS66/67WV51216DBLL
подробное описание детали  8Mb LOW VOLTAGE, ULTRA LOW POWER PSEUDO CMOS STATIC RAM
PDF  17 Pages
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производитель  ISSI [Integrated Silicon Solution, Inc]
домашняя страница  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc

IS66/67WV51216DBLL датащи(HTML) 7 Page - Integrated Silicon Solution, Inc

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Integrated Silicon Solution, Inc. — www.issi.com
7
Rev.  A
06/28/2011
IS66WV51216DALL
IS66/67WV51216DBLL
2.5V-3.6V POWER SUPPLY CHARACTERISTICS (Over Operating Range)
Symbol  Parameter 
Test Conditions 
 
 
 
Max. 
 
Unit
   
 
 
 
 
 
55ns 
Icc
Vdd Dynamic Operating Vdd = Max.,
Com.
25
mA
Supply Current
Iout = 0 mA, f = fmAX
Ind.
28
All Inputs 0.4V
Auto.
35
or Vdd – 0.3V
typ.(2)
15
Icc1
Operating Supply
Vdd = Max., CS1 = 0.2V Com.
5
mA
Current
WE
= Vdd – 0.2V
Ind.
5
CS2 = Vdd – 0.2V, f = 1mHzAuto.
10
ISB1
TTL Standby Current
Vdd = Max.,
Com.
0.6
mA
(TTL Inputs)
VIn = VIH or VIL
Ind.
0.6
CS1
= VIH , CS2 = VIL,
Auto.
1
f = 1 MHz
   
OR
ULB Control
Vdd = Max., VIn = VIH or VIL
CS1
= VIL, f = 0, UB = VIH, LB = VIH
ISB2
CMOS Standby
Vdd = Max.,
Com.
100
μA
Current (CMOS Inputs)
CS1 ≥
Vdd – 0.2V,
Ind.
130
CS2 ≤ 0.2V,
Auto.
150
VIn ≥ Vdd – 0.2V, or
typ.(2)
75
VIn ≤ 0.2V, f = 0
   
OR
ULB Control
Vdd = Max., CS1 = VIL, cS2=VIH
VIn ≥ Vdd – 0.2V, or VIn ≤ 0.2V, f = 0;
UB
/ LB = Vdd – 0.2V
Note:
1. At f = fmAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
2. Typical values are measured at Vdd = 3.0V, TA = 25oC and not 100% tested.



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