6

Integrated Silicon Solution, Inc. — www.issi.com

Rev. D

06/21/2011

IS61WV12816DALL/DALS, IS61WV12816DBLL/DBLS,

IS64WV12816DBLL/DBLS

Symbol

Parameter

Value

Unit

Terminal Voltage with Respect to GND

V

–0.3 to 4.0

V

Storage Temperature

–65 to +150

°C

Power Dissipation

1.0

W

Notes:

1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage

to the device. This is a stress rating only and functional operation of the device at these or any other conditions

above those indicated in the operational sections of this specification is not implied. Exposure to absolute

maximum rating conditions for extended periods may affect reliability.

Symbol

Parameter

Conditions

Max.

Unit

Input Capacitance

6

pF

Input/Output Capacitance

8

pF

Notes:

1. Tested initially and after any design or process changes that may affect these parameters.