http://www.belling.com.cn

3/28/2007

Page 2/6

BLV730

N-channel Enhancement Mode Power MOSFET

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

BV

DSS

Drain-Source Breakdown Voltage

V

400

-

-

V

∆BV

DSS

/

∆T

J

Breakdown Voltage

Temperature Coefficient

Reference to 25℃,

I

-

0.54

-

V/℃

R

DS(ON)

Static Drain-Source On-Resistance

V

-

-

1.0

Ω

V

GS(th)

Gate Threshold Voltage

V

2

-

4

V

g

fs

Forward Transconductance(note3)

V

2.9

-

-

S

I

DSS

Drain-Source Leakage Current

V

-

-

1

uA

Drain-Source Leakage Current

Tc=125℃

V

-

-

50

uA

I

GSS

Gate-Source Leakage Current

V

-

-

±100

nA

Qg

Total Gate Charge

-

-

38

nC

Qgs

Gate-Source Charge

-

-

5.7

nC

Qgd

Gate-Drain Charge

note3

-

-

22

nC

Turn-on Delay Time

-

10

-

ns

Turn-on Rise Time

-

15

-

ns

Turn-off Delay Time

-

38

-

ns

Turn-off Fall Time

Ω

note3

-

14

-

ns

Ciss

Input Capacitance

-

700

-

pF

Coss

Output Capacitance

-

170

-

pF

Crss

Reverse Transfer Capacitance

f = 1MHz

-

64

-

pF

Source-Drain Diode Characteristics

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

I

S

Continuous Source Diode Forward Current

-

-

5.5

A

I

SM

Pulsed Source Diode Forward Current (note1)

-

-

22

A

V

SD

Forward On Voltage

-

-

2.0

V

Reverse Recovery Time

-

270

530

ns

Reverse Recovery Charge

-

1.0

2.2

uC

注：

(1) Repetitive Rating: Pulse width limited by maximum junction temperature

Ω，staring Tj=25C

(3) Pulse width

≤ 300 us; duty cycle ≤ 2%