http://www.belling.com.cn

- 2 -

2008.08.08

Total 6 Pages

BLV640

N-channel Enhancement Mode Power MOSFET

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

BV

DSS

Drain-Source Breakdown Voltage

V

200

-

-

V

R

DS(ON)

Static Drain-Source On-Resistance

V

-

-

0.18

Ω

V

GS(th)

Gate Threshold Voltage

V

2

-

4

V

g

fs

Forward Transconductance(note3)

V

6.7

-

-

S

I

DSS

Drain-Source Leakage Current

V

-

-

1

uA

Drain-Source Leakage Current

Tc=125℃

V

-

-

50

uA

I

GSS

Gate-Source Leakage Current

V

-

-

±100

nA

Qg

Total Gate Charge

-

35.7

70

nC

Qgs

Gate-Source Charge

-

6.7

13

nC

Qgd

Gate-Drain Charge

Note3

-

17.5

39

nC

Turn-on Delay Time

-

40

-

ns

Turn-on Rise Time

-

132

-

ns

Turn-off Delay Time

-

93

-

ns

Turn-off Fall Time

Ω

Note3

-

31

-

ns

Ciss

Input Capacitance

-

1312

-

pF

Coss

Output Capacitance

-

159

-

pF

Crss

Reverse Transfer Capacitance

f = 1MHz

-

38

-

pF

Source-Drain Diode Characteristics

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

I

S

Continuous Source Diode Forward Current

-

-

18

A

I

SM

Pulsed Source Diode Forward Current (note1)

-

-

72

A

V

SD

Forward On Voltage

-

-

2.0

V

Reverse Recovery Time

-

300

600

ns

Reverse Recovery Charge

-

3.4

7.1

uC

Note：

(1) Repetitive Rating: Pulse width limited by maximum junction temperature

Ω, staring Tj=25C

(3) Pulse width

≤ 300 us; duty cycle ≤ 2%