RN2912FS,RN2913FS

2007-11-01

1

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor)

RN2912FS, RN2913FS

Switching, Inverter Circuit, Interface Circuit and

Driver Circuit Applications

• Two devices are incorporated into a fine pitch small mold (6-pin)

package.

• Incorporating a bias resistor into a transistor reduces parts count.

Reducing the parts count enables the manufacture of ever more

compact equipment and lowers assembly cost.

• Complementary to RN1912FS and RN1913FS

Equivalent Circuit and Bias Resistor Values

(Q1, Q2 common)

Unit: mm

fS6

0.1±0.05

6

0.8±0.05

1.0±0.05

1

2

0.1±0.05

3

5

4

1.EMIITTER1

2.BASE1

3.COLLECTOR2

4.EMITTER2

5.BASE2

6.COLLECTOR1

(E1)

(B1)

(C2)

(E2)

(B2)

(C1)

JEDEC

―

JEITA

―

TOSHIBA

2-1F1D

Weight: 0.001 g (typ.)

R1

B

C

E

6

5

4

1

2

3

Q1

Q2

Characteristics

Symbol

Rating

Unit

Collector-base voltage

−20

V

Collector-emitter voltage

−20

V

Emitter-base voltage

−5

V

Collector current

−50

mA

Collector power dissipation

50

mW

Junction temperature

150

°C

Storage temperature range

−55~150

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure rate,

etc).

Note 1: Total rating

Equivalent Circuit

(top view)