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RN2907FS датащи(PDF) 1 Page - Toshiba Semiconductor

номер детали RN2907FS
подробное описание детали  Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
PDF  6 Pages
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производитель  TOSHIBA [Toshiba Semiconductor]
домашняя страница  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

RN2907FS датащи(HTML) 1 Page - Toshiba Semiconductor

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RN2907FS~RN2909FS
2010-07-08
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
RN2907FS,RN2908FS,RN2909FS
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications.
• Two devices are incorporated into a fine pitch small mold (6-pin)
package.
• Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enables the manufacture of ever more
compact equipment and lowers assembly cost.
• Complementary to RN1907FS to RN1909FS
Equivalent Circuit and Bias Resistor Values
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 common)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*: Total rating
Unit: mm
fS6
1.EMIITTER1
2.EMITTER2
3.BASE2
4.COLLECTOR2
5.BASE1
6.COLLECTOR1
0.1±0.05
6
0.8±0.05
1.0±0.05
1
2
0.1±0.05
3
5
4
(E1)
(E2)
(B2)
(C2)
(B2)
(C1)
fS6
1.EMITTER1
2.BASE1
3.COLLECTOR2
4.EMITTER2
5.BASE2
6.COLLECTOR1
(E1)
(B1)
(C2)
(E2)
(B2)
(C1)
JEDEC
JEITA
TOSHIBA
2-1F1D
Weight: 1 mg (typ.)
R1
B
C
E
Type No.
R1 (k
Ω)
R2 (k
Ω)
RN2907FS
10
47
RN2908FS
22
47
RN2909FS
47
22
6
5
4
1
2
3
Q1
Q2
Equivalent Circuit (top view)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
−20
V
Collector-emitter voltage
RN2907FS to
RN2909FS
VCEO
−20
V
RN2907FS
−6
RN2908FS
−7
Emitter-base voltage
RN2909FS
VEBO
−15
V
Collector current
IC
−50
mA
Collector power dissipation
PC*
50
mW
Junction temperature
Tj
150
°C
Storage temperature range
RN2907FS to
RN2909FS
Tstg
−55 to 150
°C


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