| поискавой системы для электроныых деталей |
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RN2907FS датащи(PDF) 1 Page - Toshiba Semiconductor |
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RN2907FS датащи(HTML) 1 Page - Toshiba Semiconductor |
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1 / 6 page ![]() RN2907FS~RN2909FS 2010-07-08 1 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2907FS,RN2908FS,RN2909FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. • Two devices are incorporated into a fine pitch small mold (6-pin) package. • Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enables the manufacture of ever more compact equipment and lowers assembly cost. • Complementary to RN1907FS to RN1909FS Equivalent Circuit and Bias Resistor Values Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 common) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). *: Total rating Unit: mm fS6 1.EMIITTER1 2.EMITTER2 3.BASE2 4.COLLECTOR2 5.BASE1 6.COLLECTOR1 0.1±0.05 6 0.8±0.05 1.0±0.05 1 2 0.1±0.05 3 5 4 (E1) (E2) (B2) (C2) (B2) (C1) fS6 1.EMITTER1 2.BASE1 3.COLLECTOR2 4.EMITTER2 5.BASE2 6.COLLECTOR1 (E1) (B1) (C2) (E2) (B2) (C1) JEDEC ― JEITA ― TOSHIBA 2-1F1D Weight: 1 mg (typ.) R1 B C E Type No. R1 (k Ω) R2 (k Ω) RN2907FS 10 47 RN2908FS 22 47 RN2909FS 47 22 6 5 4 1 2 3 Q1 Q2 Equivalent Circuit (top view) Characteristics Symbol Rating Unit Collector-base voltage VCBO −20 V Collector-emitter voltage RN2907FS to RN2909FS VCEO −20 V RN2907FS −6 RN2908FS −7 Emitter-base voltage RN2909FS VEBO −15 V Collector current IC −50 mA Collector power dissipation PC* 50 mW Junction temperature Tj 150 °C Storage temperature range RN2907FS to RN2909FS Tstg −55 to 150 °C |
Аналогичный номер детали - RN2907FS |
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Аналогичное описание - RN2907FS |
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