RN2901FS~RN2906FS

2007-11-01

1

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)

RN2901FS,RN2902FS,RN2903FS

RN2904FS,RN2905FS,RN2906FS

Switching, Inverter Circuit, Interface Circuit and

Driver Circuit Applications

• Two devices are incorporated into a fine pitch small mold (6-pin)

package.

• Incorporating a bias resistor into a transistor reduces parts count.

Reducing the parts count enables the manufacture of ever more

compact equipment and lowers assembly cost.

• Complementary to RN1901FS~RN1906FS

Equivalent Circuit and Bias Resistor Values

Characteristics

Symbol

Rating

Unit

Collector-base voltage

−20

V

Collector-emitter voltage

RN2901FS~2906FS

−20

V

RN2901FS~2904FS

−10

Emitter-base voltage

RN2905FS, 2906FS

−5

V

Collector current

−50

mA

Collector power dissipation

50

mW

Junction temperature

150

°C

Storage temperature range

RN2901FS~2906FS

−55~150

°C

Note:

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Total rating

Unit: mm

fS6

0.1±0.05

6

0.8±0.05

1.0±0.05

1

2

0.1±0.05

3

5

4

1.EMITTER1

2.BASE1

3.COLLECTOR2

4.EMITTER2

5.BASE2

6.COLLECTOR1

(E1)

(B1)

(C2)

(E2)

(B2)

(C1)

JEDEC

―

JEITA

―

TOSHIBA

2-1F1D

Weight: 0.001g (typ.)

Type No.

R1 (k

Ω)

R2 (k

Ω)

RN2901FS

4.7

4.7

RN2902FS

10

10

RN2903FS

22

22

RN2904FS

47

47

RN2905FS

2.2

47

RN2906FS

4.7

47

R1

B

C

E

Equivalent Circuit

(top view)

6

54

1

2

3

Q1

Q2