RN1107ACT ~ RN1109ACT

2009-04-13

1

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)

RN1107ACT, RN1108ACT, RN1109ACT

Switching, Inverter Circuit, Interface Circuit and

Driver Circuit Applications

• Extra small package(CST3) is applicable for extra high density

fabrication.

• Incorporating a bias resistor into a transistor reduces the number of parts,

which enables the manufacture of ever more compact equipment and

saves assembly cost.

• Complementary to RN2107ACT to RN2109ACT

Equivalent Circuit and Bias Resistor Values

Characteristics

Symbol

Rating

Unit

Collector-base voltage

50

V

Collector-emitter voltage

RN1107ACT to RN1109ACT

50

V

RN1107ACT

6

RN1108ACT

7

Emitter-base voltage

RN1109ACT

15

V

Collector current

80

mA

Collector power dissipation

100

mW

Junction temperature

150

°C

Storage temperature range

RN1107ACT to RN1109ACT

−55 to 150

°C

Note:

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note1 : Mounted on FR4 board (10 mm

× 10 mm × 1 mmt)

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-1J1A

Weight: 0.75 mg (typ.)

R1

B

C

E

Type No.

R1 (k

Ω)

R2 (k

Ω)

RN1107ACT

10

47

RN1108ACT

22

47

RN1109ACT

47

22

３

１２

0.35±0.02

0.15±0.03

0.5±0.03

0.6±0.05

0.05±0.03

1.BASE

2.EMITTER

3.COLLECTOR

CST3

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