RN1101ACT ~ RN1106ACT

2010-03-11

1

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)

RN1101ACT,RN1102ACT,RN1103ACT

RN1104ACT,RN1105ACT,RN1106ACT

Switching Applications

Inverter Circuit Applications

Interface Circuit Applications

Driver Circuit Applications

• Incorporating a bias resistor into a transistor reduces the number of parts,

which enables the manufacture of ever more compact equipment and

saves assembly cost.

• Complementary to RN2101ACT to RN2106ACT

Equivalent Circuit and Bias Resistor Values

Characteristics

Symbol

Rating

Unit

Collector-base voltage

50

V

Collector-emitter voltage

RN1101ACT to 1106ACT

50

V

RN1101ACT to 1104ACT

10

Emitter-base voltage

RN1105ACT, 1106ACT

5

V

Collector current

80

mA

Collector power dissipation

100

mW

Junction temperature

150

°C

Storage temperature range

RN1101ACT to 1106ACT

−55 to 150

°C

Note1: Mounted on FR4 board (10 mm

× 10 mm × 1 mm)

Note2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if

the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-1J1A

Weight: 0.75 mg (typ.)

R1

B

C

E

Type No.

R1 (k

Ω)

R2 (k

Ω)

RN1101ACT

4.7

4.7

RN1102ACT

10

10

RN1103ACT

22

22

RN1104ACT

47

47

RN1105ACT

2.2

47

RN1106ACT

4.7

47

３

１２

0.35±0.02

0.15±0.03

0.5±0.03

0.6±0.05

0.05±0.03

CST3

1.BASE

2. EMITTER

3.COLLECTOR