RN49P1FS datasheet(3/6 Pages) TOSHIBA

номер детали	RN49P1FS

подробное описание детали	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

PDF	6 Pages

Scroll/Zoom	100%

производитель	TOSHIBA [Toshiba Semiconductor]

домашняя страница	http://www.semicon.toshiba.co.jp/eng

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3 / 6 page

RN49P1FS

2007-11-01

Electrical Characteristics (Ta = 25°C) (Q1)

Characteristic

Symbol

Test Condition

Min

Typ.

Max

Unit

ICBO

VCB = 20 V, IE = 0

⎯

100

Collector cutoff current

ICEO

VCE = 20 V, IB = 0

⎯

500

Emitter cutoff current

IEBO

VEB = 10 V, IC = 0

0.41

⎯

0.63

DC current gain

hFE

VCE = 5 V, IC = 10 mA

⎯

Collector-emitter saturation voltage

VCE (sat)

IC = 5 mA, IB = 0.25 mA

⎯

0.15

Input voltage (ON)

VI (ON)

VCE = 0.2 V, IC = 5 mA

1.0

⎯

2.2

Input voltage (OFF)

VI (OFF)

VCE = 5 V, IC = 0.1 mA

0.8

⎯

1.5

Collector output capacitance

Cob

VCB = 10 V, IE = 0, f = 1 MHz

⎯

1.2

⎯

Input resistor

⎯

Resistor ratio

R1/R2

⎯

0.8

1.0

1.2

Electrical Characteristics (Ta = 25°C) (Q2)

Characteristic

Symbol

Test Condition

Min

Typ.

Max

Unit

Collector cutoff current

ICBO

VCB = −20 V, IE = 0

⎯

−100

Emitter cutoff current

IEBO

VEB = −5 V, IC = 0

⎯

−100

DC current gain

hFE

VCE = −5 V, IC = −1 mA

300

⎯

Collector-emitter saturation voltage

VCE (sat)

IC = −5 mA, IB = −0.25 mA

⎯

−0.15

Collector output capacitance

Cob

VCB = −10 V, IE = 0, f = 1 MHz

⎯

1.2

⎯

Input resistor

⎯

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