2SC6142

2010-04-23

1

TOSHIBA Transistor Silicon NPN Triple Diffused Type

2SC6142

○

High Voltage Switching Applications

○

Switching Regulator Applications

○

DC-DC Converter Applications

Characteristics

Symbol

Rating

Unit

Collector-base voltage

800

V

800

V

Collector-emitter voltage

375

V

Emitter-base voltage

8

V

DC

1.5

Collector current

Pulse

3

A

Base current

0.75

A

Collector power dissipation

1.1

W

Junction temperature

150

°C

Storage temperature range

−55 to 150

°C

Note 1: Ensure that the channel temperature does not exceed 150°C during use of the device.

Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Unit: mm

1. BASE

2. COLLECTOR

3. EMITTER

JEDEC

⎯

JEITA

⎯

TOSHIBA

2-7J2A

Weight: 0.32 g (typ.)

０．６±０．１５

０．８ MAX．

１２３

１．1 MAX．

０．６±０．１５

０．６ MAX

０．６ MAX．

１．１±０．２

６．５±０．２

２．３

２．３

５．２±０．２

０．９