2SC6126 datasheet(3/5 Pages) TOSHIBA

номер детали	2SC6126

подробное описание детали	High-Speed Switching Applications DC-DC Converter Applications LCD Backlighting Applications

PDF	5 Pages

Scroll/Zoom	100%

производитель	TOSHIBA [Toshiba Semiconductor]

домашняя страница	http://www.semicon.toshiba.co.jp/eng

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3 / 5 page

2SC6126

2009-07-07

0.01

0.1

1.0

Collector current IC (A)

VCE (sat) – IC

0.001

0.01

0.1

IC – VBE

Base-emitter voltage VBE (V)

0.4

0.8

1.6

1.2

Common emitter

IC/IB = 30

Single nonrepetitive pulse

−55℃

25℃

Ta=100℃

Common emitter

VCE = 2 V

Single nonrepetitive pulse

Ta=100℃

−55℃

25℃

Collector-emitter voltage VCE (V)

IC – VCE

0.2

0.4

0.6

0.8

Common emitter

Ta=25℃

Single nonrepetitive pulse

hFE－Ic

100

1000

0.001

0.01

0.1

Collector current IC (A)

0.1

Collector current IC (A)

VBE (sat) – IC

0.001

0.01

0.1

Common emitter

VCE = 2 V

Single nonrepetitive pulse

−55℃

25℃

Ta=100℃

−55℃

Ta=100℃

25℃

0.3

100

IB=2ｍA

0.01

0.1

Collector

−emitter voltage VCE

(V)

0.1

100

Safe operating area

*: Single nonrepetitive pulse Ta

= 25°C

Note that the curves for 100 ms, 10 s and DC

operation will be different when the devices

aren’t mounted on an FR4 board (glass-epoxy,

1.6 mm thick, Cu area: 645 mm

2).

These characteristic curves must be derated

linearly with increase in temperature.

IC max (pulse) *

DC operation

Ta = 25°C

10 s*

IC max (continuous)*

100 ms*

1 ms*

10 ms*

100μs*

Common emitter

IC/IB = 30

Single nonrepetitive pulse

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