2SC6124

2009-10-19

1

TOSHIBA Transistor Silicon NPN Epitaxial Type

2SC6124

Power Amplifier Applications

Power Switching Applications

Low collector emitter saturation voltage

Complementary to 2SA2206

Characteristic

Symbol

Rating

Unit

Collector-base voltage

160

V

160

V

Collector-emitter voltage

80

V

Emitter-base voltage

7

V

DC

2

A

Collector current

Pulse

4

A

Base current

0.5

A

t = 10 s

2.5

Collector power dissipation

DC

(Note 1)

1.0

W

Junction temperature

150

°C

Storage temperature range

−55 to 150

°C

Note 1: Mounted on an FR4 board (glass-epoxy; 1.6 mm thick; Cu area, 645 mm

Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Unit: mm

JEDEC

⎯

JEITA

SC-62

TOSHIBA

2-5K1A

Weight: 0.05 g (typ.)

1 : BASE

2 : COLLECTOR (HEAT SINK)

3 : EMITTER