2SC6026CT

2009-04-13

1

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)

2SC6026CT

General Purpose Amplifier Applications

• High voltage and high current

• Complementary to 2SA2154CT

Characteristics

Symbol

Rating

Unit

Collector-base voltage

60

V

Collector-emitter voltage

50

V

Emitter-base voltage

5

V

Collector current

100

mA

Base current

30

mA

Collector power dissipation

100

mW

Junction temperature

150

°C

Storage temperature range

−55 to 150

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note1 : Mounted on FR4 board (10 mm

× 10 mm × 1 mmt)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Collector cut-off current

⎯

⎯

0.1

μA

Emitter cut-off current

⎯

⎯

0.1

μA

DC current gain

120

⎯

400

⎯

Collector-emitter saturation voltage

⎯

0.1

0.25

V

Transition frequency

60

⎯

⎯

MHz

Collector output capacitance

⎯

0.95

⎯

pF

( ) marking symbol

Marking

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-1J1A

Weight: 0.75 mg (typ.)

３

１２

0.35±0.02

0.15±0.03

0.5±0.03

0.6±0.05

0.05±0.03

CST3

1.BASE

2.EMITTER

3.COLLECTOR

Type Name

7F

1

3

2