SSM6N37FU

2010-08-31

1

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

SSM6N37FU

○

High Speed Switching Applications

○

Analog Switch Applications

• 1.5Vdrive

• Low ON-resistance

(Q1, Q2 Common)

Characteristics

Symbol

Rating

Unit

Drain-Source voltage

20

V

Gate-Source voltage

± 10

V

DC

250

Drain current

Pulse

500

mA

Power dissipation

300

mW

Channel temperature

150

°C

Storage temperature range

−55 to 150

°C

Note:

Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are

within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Total rating

Mounted on FR4 board

(25.4 mm

Marking(top view)

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-2J1C

Weight: 6.8 mg(typ.)

0.4 mm

SU

6

5

4

1

2

3

Q1

Q2

6

5

4

1

2

3