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TC7SH125F датащи(PDF) 1 Page - Toshiba Semiconductor |
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TC7SH125F датащи(HTML) 1 Page - Toshiba Semiconductor |
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1 / 6 page ![]() TC7SH125F/FU 2009-09-25 1 TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SH125F, TC7SH125FU Bus Buffer 3-STATE Output Features • High speed: tpd = 3.8ns (typ.) at VCC = 5V, 15pF • Low power dissipation: ICC = 2μA (max) at Ta = 25°C • High noise immunity: VNIH = VNIL = 28% VCC (min) • 5.5 V tolerant input. • Wide operating voltage range: VCC = 2 to 5.5V Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Supply voltage range VCC −0.5 to 7.0 V DC input voltage VIN −0.5 to 7.0 V DC output voltage VOUT −0.5 to VCC + 0.5 V Input diode current IIK −20 mA Output diode current IOK ±20 (Note 1) mA DC output current IOUT ±25 mA DC VCC/ground current ICC ±50 mA Power dissipation PD 200 mW Storage temperature Tstg −65 to 150 °C Lead temperature (10 s) TL 260 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: VOUT < GND, VOUT > VCC TC7SH125F TC7SH125FU Weight SSOP5-P-0.95 : 0.016 g (typ.) SSOP5-P-0.65A : 0.006 g (typ.) Product name H B Marking Pin Assignment (top view) G 1 IN A 2 GND 3 5 VCC 4 OUT Y |
Аналогичный номер детали - TC7SH125F_09 |
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Аналогичное описание - TC7SH125F_09 |
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