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TC4W66F датащи(PDF) 2 Page - Toshiba Semiconductor

номер детали TC4W66F
подробное описание детали  Dual Bilateral Switch
PDF  8 Pages
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производитель  TOSHIBA [Toshiba Semiconductor]
домашняя страница  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TC4W66F датащи(HTML) 2 Page - Toshiba Semiconductor

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TC4W66F/FU
2007-11-01
2
Logic Diagram
(1/2 TC4W66F)
Pin Assignment (top view)
Truth Table
Control
Impedance Between IN/OUT-OUT/IN
(Note 1)
H
0.5 to 5
× 102 Ω
L
>109 Ω
Note 1: See static electrical characteristics.
Operating Ranges (VSS = 0 V)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
DC supply voltage
VDD
⎯
3
⎯
18
V
Input/output voltage
VDD/VOUT
⎯
0
⎯
VDD
V
Static Electrical Characteristics (in case not specifically appointed, VSS = 0 V)
Ta
= −40°C
Ta
= 25°C
Ta
= 85°C
Characteristics
Symbol
Test
Circuit
Test Condition VDD
(V)
Min
Max
Min
Typ.
Max
Min
Max
Unit
Control input high
voltage
VIH
⎯
⏐IIS⏐ = 10 μA
5
10
15
3.5
7.0
11.0
⎯
⎯
⎯
3.5
7.0
11.0
2.75
5.50
8.25
⎯
⎯
⎯
3.5
7.0
11.0
⎯
⎯
⎯
V
Control input low
voltage
VIL
⎯
⏐IIS⏐ = 10 μA
5
10
15
⎯
⎯
⎯
1.5
3.0
4.0
⎯
⎯
⎯
2.25
4.5
6.75
1.5
3.0
4.0
⎯
⎯
⎯
1.5
3.0
4.0
V
On-state
resistance
RON
⎯
0 <= VIS <= VDD
RL = 10 kΩ
5
10
15
⎯
⎯
⎯
800
210
140
⎯
⎯
⎯
290
120
85
950
250
160
⎯
⎯
⎯
1200
300
200
Ω
ΔOn-state
resistance
(between any 2
switches)
RONΔ
⎯
⎯
5
10
15
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
10
6
4
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Ω
Input/output
leakage current
IOFF
⎯
VIN = 18 V,
VOUT = 0 V
VIN = 0 V,
VOUT = 18 V
18
18
⎯
⎯
±100
±100
⎯
⎯
±0.1
±0.1
±100
±100
⎯
⎯
±1000
±1000
nA
Quiescent device
current
IDD
⎯
VIN = VDD,
VSS*
5
10
15
⎯
⎯
⎯
0.25
0.5
1.0
⎯
⎯
⎯
0.001
0.001
0.002
0.25
0.5
1.0
⎯
⎯
⎯
7.5
15
30
μA
H level
IIH
⎯
VIH = 18 V
18
⎯
0.1
⎯
10−
5
0.1
⎯
1.0
Input
current
L level
IIL
⎯
VIL = 0 V
18
⎯
−0.1
⎯
−10−5
−0.1
⎯
−1.0
μA



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