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D1F60 датащи(PDF) 2 Page - Shenzhen Taychipst Electronic Co., Ltd |
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D1F60 датащи(HTML) 2 Page - Shenzhen Taychipst Electronic Co., Ltd |
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2 / 2 page ![]() RATINGS AND CHARACTERISTIC CURVES D1F60 E-mail: sales@taychipst.com Web Site: www.taychipst.com 2 of 2 D1F60 General Purpose Rectifiers Forward Voltage 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 0.1 1 10 D1Fx Pulse measurement per diode Tl=150 °C [TYP] Tl=25 °C [TYP] Forward Voltage VF [V] 0 0.5 1 1.5 2 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 D1Fx Forward Power Dissipation SIN Average Rectified Forward Current IO [A] Tj = 150 °C Sine wave 0 tp IO T D=tp/T 0 20 40 60 80 100 120 140 160 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 D1Fx Derating Curve VR = VRM SIN 0 VR Ambient Temperature Ta [ °C] Alumina substrate Soldering land 2mm φ Conductor layer 20 µm Substrate thickness 0.64mm 0 tp IO T D=tp/T 0 20 40 60 80 100 120 140 160 0 0.2 0.4 0.6 0.8 1 1.2 1.4 D1Fx Derating Curve SIN 0 VR Ambient Temperature Ta [ °C] Glass-epoxy substrate Soldering land 2mm φ Conductor layer 35 µm VR = VRM Sine wave R-load Free in air Peak Surge Forward Capability 0 10 20 30 40 50 1 10 100 D1Fx 2 5 20 50 10ms 10ms 1 cycle Number of Cycles [cycles] non-repetitive, sine wave, Tj=25 °C before surge current is applied 600V 1A |
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